Datasheet > IRLMS5703TRPBF

IRLMS5703TRPBF

更新时间： 2024-10-31 01:15:55

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	212K
描述
Generation V Technology

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中文翻译

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数据手册
替代型号

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IRLMS5703TRPBF 数据手册

PD - 94896

IRLMS5703PbF

HEXFET^®Power MOSFET

l Generation V Technology

l Micro6 Package Style

l Ultra Low R_DS(on)

l P-channel MOSFET

l Lead-Free

V_DSS= -30V

R_DS(on)= 0.18Ω

Description

Top View

Fifth Generation HEXFET^®power MOSFETs from

International Rectifier utilize advanced processing

techniques to achieve extremely low on-resistance

per silicon area. This benefit, combined with the fast

switching speed and ruggedized device design that

HEXFET^®power MOSFETs are well known for,

provides the designer with an extremely efficient and

reliable device for use in a wide variety of applications.

The Micro6™ package with its customized leadframe

produces a HEXFET^®power MOSFET with R_DS(on)

60% less than a similar size SOT-23. This package is

idealforapplicationswhereprintedcircuitboardspace

isatapremium. It'suniquethermaldesignandR_DS(on)

reduction enables a current-handling increase of

nearly 300% compared to the SOT-23.

Micro6™

Absolute Maximum Ratings

Parameter

Max.

-2.4

Units

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ -10V

Continuous Drain Current, V_GS@- 10V

Pulsed Drain Current

-1.9

-13

P_D@T_A= 25°C

Power Dissipation

1.7

mW/°C

Linear Derating Factor

V_GS

Gate-to-Source Voltage

± 20

dv/dt

T_J,T_STG

Peak Diode Recovery dv/dt

Junction and Storage Temperature Range

5.0

V/ns

°C

-55 to + 150

Thermal Resistance Ratings

Parameter

Min.

Typ.

Max

Units

R_θJA

Maximum Junction-to-Ambient

°C/W

www.irf.com

1/18/05

12 3 4 5 6 7 8

中文翻译

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IRLMS5703TRPBF 替代型号

型号	品牌	替代类型	描述	数据表
IRLMS5703TR	INFINEON	类似代替	Power Field-Effect Transistor, 2.3A I(D), 30V, 0.2ohm, 1-Element, P-Channel, Silicon, Meta
IRLMS5703PBF	INFINEON	功能相似	Power Field-Effect Transistor, 2.4A I(D), 30V, 0.18ohm, 1-Element, P-Channel, Silicon, Met
IRLMS5703	INFINEON	功能相似	HEXFET Power MOSFET

与IRLMS5703TRPBF相关器件

型号	品牌	获取价格	描述	数据表
IRLMS6702	INFINEON	获取价格	HEXFET Power MOSFET
IRLMS6702PBF	INFINEON	获取价格	Generation V Technology, Micro6 Package Style, Ultra Low RDS
IRLMS6702PBF-1	INFINEON	获取价格	Industry-standard pinout Micro-6 Package
IRLMS6702PBF-1_15	INFINEON	获取价格	Industry-standard pinout Micro-6 Package
IRLMS6702TR	INFINEON	获取价格	Power Field-Effect Transistor, 2.3A I(D), 20V, 0.2ohm, 1-Element, P-Channel, Silicon, Meta
IRLMS6702TRPBF	INFINEON	获取价格	Generation V Technology
IRLMS6702TRPBF-1	INFINEON	获取价格	Power Field-Effect Transistor
IRLMS6802	INFINEON	获取价格	HEXFET Power MOSFET
IRLMS6802PBF	INFINEON	获取价格	HEXFET Power MOSFET
IRLMS6802TR	INFINEON	获取价格	Power Field-Effect Transistor, 5.6A I(D), 20V, 0.05ohm, 1-Element, P-Channel, Silicon, Met