IRLMS6802

更新时间： 2024-11-17 22:22:39

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
7页	94K
描述
HEXFET Power MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRLMS6802 数据手册

PD- 91848E

IRLMS6802

HEXFET^®Power MOSFET

l Ultra Low On-Resistance

l P-Channel MOSFET

l Surface Mount

V_DSS= -20V

l Available in Tape & Reel

R_DS(on)= 0.050Ω

Top View

Description

These P-Channel MOSFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit

provides the designer with an extremely efficient device for

use in battery and load management applications.

The Micro6

package with its customized leadframe

produces a HEXFET power MOSFET with R_DS(on)60%

less than a similar size SOT-23. This package is ideal for

applications where printed circuit board space is at a

premium.TheuniquethermaldesignandR_DS(on)reduction

enables a current-handling increase of nearly 300%

compared to the SOT-23.

Micro6ä

Absolute Maximum Ratings

Parameter

Drain- Source Voltage

Max.

-20

Units

V_DS

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ -4.5V

Pulsed Drain Current

-5.6

-4.5

-45

P_D@T_A= 25°C

P_D@T_A= 70°C

Power Dissipation

2.0

Power Dissipation

1.3

Linear Derating Factor

0.016

W/°C

E_AS

Single Pulse Avalanche Energy

Gate-to-Source Voltage

V_GS

± 12

T_J,T_STG

Junction and Storage Temperature Range

-55 to + 150

°C

Thermal Resistance

Parameter

Maximum Junction-to-Ambient

Max.

62.5

Units

°C/W

R_θJA

www.irf.com

01/13/03

12 3 4 5 6 7

中文翻译

下载PDF

与IRLMS6802相关器件

型号	品牌	获取价格	描述	数据表
IRLMS6802PBF	INFINEON	获取价格	HEXFET Power MOSFET
IRLMS6802TR	INFINEON	获取价格	Power Field-Effect Transistor, 5.6A I(D), 20V, 0.05ohm, 1-Element, P-Channel, Silicon, Met
IRLMS6802TRPBF	INFINEON	获取价格	Ultra Low On-Resistance
IRLP2505	ETC	获取价格
IRLP2505PBF	INFINEON	获取价格	Power Field-Effect Transistor, 90A I(D), 55V, 0.01ohm, 1-Element, N-Channel, Silicon, Meta
IRLP3034	INFINEON	获取价格	The StrongIRFET™ power MOSFET family is optim
IRLP3034PBF	INFINEON	获取价格	HEXFET Power MOSFET
IRLP3803	INFINEON	获取价格	HEXFET㈢ Power MOSFET(VDSS = 30V,RDS(on) = 0.0
IRLP3803PBF	INFINEON	获取价格	Power Field-Effect Transistor, 120A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Me
IRLR/U120A	FAIRCHILD	获取价格	ADVANCED POWER MOSFET