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IRLMS6802PBF

更新时间： 2024-09-15 04:23:07

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管脉冲光电二极管
页数	文件大小	规格书
7页	149K
描述
HEXFET Power MOSFET

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中文翻译

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数据手册

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IRLMS6802PBF 数据手册

PD- 94897

IRLMS6802PbF

HEXFET^®Power MOSFET

l Ultra Low On-Resistance

l P-Channel MOSFET

l Surface Mount

l Available in Tape & Reel

l Lead-Free

V_DSS= -20V

R_DS(on)= 0.050Ω

Top View

Description

These P-Channel MOSFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit

provides the designer with an extremely efficient device for

use in battery and load management applications.

The Micro6™ package with its customized leadframe

produces a HEXFET^®power MOSFET with R_DS(on)60%

less than a similar size SOT-23. This package is ideal for

applications where printed circuit board space is at a

premium.TheuniquethermaldesignandR_DS(on)reduction

enables a current-handling increase of nearly 300%

compared to the SOT-23.

Micro6ä

Absolute Maximum Ratings

Parameter

Drain- Source Voltage

Max.

-20

Units

V_DS

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ -4.5V

Pulsed Drain Current

-5.6

-4.5

-45

P_D@T_A= 25°C

P_D@T_A= 70°C

Power Dissipation

2.0

Power Dissipation

1.3

Linear Derating Factor

0.016

W/°C

E_AS

Single Pulse Avalanche Energy

Gate-to-Source Voltage

V_GS

± 12

T_J,T_STG

Junction and Storage Temperature Range

-55 to + 150

°C

Thermal Resistance

Parameter

Maximum Junction-to-Ambient

Max.

62.5

Units

°C/W

R_θJA

www.irf.com

1/18/05

12 3 4 5 6 7

中文翻译

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