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IRLMS6802TRPBF PDF预览

IRLMS6802TRPBF

更新时间: 2024-09-15 12:28:19
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲光电二极管PC
页数 文件大小 规格书
7页 154K
描述
Ultra Low On-Resistance

IRLMS6802TRPBF 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-G6Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:1.69
Samacsys Confidence:3Samacsys Status:Released
Samacsys PartID:1986437Samacsys Pin Count:6
Samacsys Part Category:MOSFET (P-Channel)Samacsys Package Category:SOT23 (6-Pin)
Samacsys Footprint Name:Micro6 (SOT23 6L)Samacsys Released Date:2020-04-27 00:40:14
Is Samacsys:N雪崩能效等级(Eas):31 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:20 V
最大漏极电流 (ID):5.6 A最大漏源导通电阻:0.05 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G6
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:6
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:P-CHANNEL
最大脉冲漏极电流 (IDM):45 A认证状态:Not Qualified
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRLMS6802TRPBF 数据手册

 浏览型号IRLMS6802TRPBF的Datasheet PDF文件第2页浏览型号IRLMS6802TRPBF的Datasheet PDF文件第3页浏览型号IRLMS6802TRPBF的Datasheet PDF文件第4页浏览型号IRLMS6802TRPBF的Datasheet PDF文件第5页浏览型号IRLMS6802TRPBF的Datasheet PDF文件第6页浏览型号IRLMS6802TRPBF的Datasheet PDF文件第7页 
PD- 94897  
IRLMS6802PbF  
HEXFET® Power MOSFET  
l Ultra Low On-Resistance  
l P-Channel MOSFET  
l Surface Mount  
l Available in Tape & Reel  
l Lead-Free  
A
1
2
6
D
D
D
VDSS = -20V  
5
D
3
4
G
S
RDS(on) = 0.050Ω  
Top View  
Description  
These P-Channel MOSFETs from International Rectifier  
utilize advanced processing techniques to achieve  
extremely low on-resistance per silicon area. This benefit  
provides the designer with an extremely efficient device for  
use in battery and load management applications.  
The Micro6package with its customized leadframe  
produces a HEXFET® power MOSFET with RDS(on) 60%  
less than a similar size SOT-23. This package is ideal for  
applications where printed circuit board space is at a  
premium.TheuniquethermaldesignandRDS(on) reduction  
enables a current-handling increase of nearly 300%  
compared to the SOT-23.  
Micro6ä  
Absolute Maximum Ratings  
Parameter  
Drain- Source Voltage  
Max.  
-20  
Units  
V
VDS  
ID @ TA = 25°C  
ID @ TA= 70°C  
IDM  
Continuous Drain Current, VGS @ -4.5V  
Continuous Drain Current, VGS @ -4.5V  
Pulsed Drain Current   
-5.6  
-4.5  
A
-45  
PD @TA = 25°C  
PD @TA = 70°C  
Power Dissipation  
2.0  
W
Power Dissipation  
1.3  
Linear Derating Factor  
0.016  
31  
W/°C  
mJ  
V
EAS  
Single Pulse Avalanche Energy„  
Gate-to-Source Voltage  
VGS  
± 12  
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to + 150  
°C  
Thermal Resistance  
Parameter  
Maximum Junction-to-Ambientƒ  
Max.  
62.5  
Units  
°C/W  
RθJA  
www.irf.com  
1
1/18/05  

IRLMS6802TRPBF 替代型号

型号 品牌 替代类型 描述 数据表
IRLMS6802TR INFINEON

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