型号 | 品牌 | 替代类型 | 描述 | 数据表 |
IRLMS6702TR | INFINEON |
功能相似 |
Power Field-Effect Transistor, 2.3A I(D), 20V, 0.2ohm, 1-Element, P-Channel, Silicon, Meta | |
IRLMS6702PBF | INFINEON |
功能相似 |
Generation V Technology, Micro6 Package Style, Ultra Low RDS |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRLMS6702PBF | INFINEON |
获取价格 |
Generation V Technology, Micro6 Package Style, Ultra Low RDS | |
IRLMS6702PBF-1 | INFINEON |
获取价格 |
Industry-standard pinout Micro-6 Package | |
IRLMS6702PBF-1_15 | INFINEON |
获取价格 |
Industry-standard pinout Micro-6 Package | |
IRLMS6702TR | INFINEON |
获取价格 |
Power Field-Effect Transistor, 2.3A I(D), 20V, 0.2ohm, 1-Element, P-Channel, Silicon, Meta | |
IRLMS6702TRPBF | INFINEON |
获取价格 |
Generation V Technology | |
IRLMS6702TRPBF-1 | INFINEON |
获取价格 |
Power Field-Effect Transistor | |
IRLMS6802 | INFINEON |
获取价格 |
HEXFET Power MOSFET | |
IRLMS6802PBF | INFINEON |
获取价格 |
HEXFET Power MOSFET | |
IRLMS6802TR | INFINEON |
获取价格 |
Power Field-Effect Transistor, 5.6A I(D), 20V, 0.05ohm, 1-Element, P-Channel, Silicon, Met | |
IRLMS6802TRPBF | INFINEON |
获取价格 |
Ultra Low On-Resistance |