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IRLMS1902PBF

更新时间： 2024-09-13 13:08:55

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲光电二极管
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IRLMS1902PBF 数据手册

PD - 91540C

IRLMS1902

HEXFET^®Power MOSFET

^lGeneration V Technology

l Micro6 Package Style

l Ultra Low R_DS(on)

V_DSS= 20V

l N-Channel MOSFET

R_DS(on)= 0.10Ω

Description

Top View

Fifth Generation HEXFET^®power MOSFETs from

International Rectifier utilize advanced processing

techniquestoachieveextremelylowon-resistanceper

silicon area. This benefit, combined with the fast

switching speed and ruggedized device design that

HEXFET^®power MOSFETs are well known for,

provides the designer with an extremely efficient and

reliable device for use in a wide variety of applications.

The Micro6 package with its customized leadframe

produces a HEXFET^®power MOSFET with R_DS(on)

60% less than a similar size SOT-23. This package is

idealforapplicationswhereprintedcircuitboardspace

isatapremium. It'suniquethermaldesignandR_DS(on)

reductionenablesacurrent-handlingincreaseofnearly

300% compared to the SOT-23.

Micro6

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ 4.5V

Pulsed Drain Current

3.2

2.6

1.7

P_D@T_A= 25°C

PowerDissipation

mW/°C

LinearDeratingFactor

V_GS

Gate-to-SourceVoltage

± 12

dv/dt

PeakDiodeRecoverydv/dt

JunctionandStorageTemperatureRange

5.0

V/ns

°C

T_J,T_STG

-55 to + 150

Thermal Resistance Ratings

Parameter

Min.

Typ.

Max

Units

R_θJA

Maximum Junction-to-Ambient

°C/W

www.irf.com

3/18/04

12 3 4 5 6 7 8

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IRLMS1902PBF 替代型号

型号	品牌	替代类型	描述	数据表
IRLMS1902TRPBF	INFINEON	功能相似	Power Field-Effect Transistor, 3.2A I(D), 20V, 0.1ohm, 1-Element, N-Channel, Silicon, Meta
IRF9956TRPBF	INFINEON	功能相似	Power Field-Effect Transistor, 3.5A I(D), 30V, 0.1ohm, 2-Element, N-Channel, Silicon, Meta
IRF9956PBF	INFINEON	功能相似	HEXFET Power MOSFET

与IRLMS1902PBF相关器件

型号	品牌	获取价格	描述	数据表
IRLMS1902TR	INFINEON	获取价格	Power Field-Effect Transistor, 3.2A I(D), 20V, 0.1ohm, 1-Element, N-Channel, Silicon, Meta
IRLMS1902TRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 3.2A I(D), 20V, 0.1ohm, 1-Element, N-Channel, Silicon, Meta
IRLMS2002	INFINEON	获取价格	HEXFET Power MOSFET
IRLMS2002PBF	INFINEON	获取价格	HEXFET Power MOSFET
IRLMS2002TR	INFINEON	获取价格	Power Field-Effect Transistor, 6.5A I(D), 20V, 0.03ohm, 1-Element, N-Channel, Silicon, Met
IRLMS2002TRPBF	INFINEON	获取价格	Ultra Low On-Resistance
IRLMS4502	INFINEON	获取价格	HEXFET Power MOSFET
IRLMS4502TR	INFINEON	获取价格	Power Field-Effect Transistor, 5.5A I(D), 12V, 0.042ohm, 1-Element, P-Channel, Silicon, Me
IRLMS5703	INFINEON	获取价格	HEXFET Power MOSFET
IRLMS5703PBF	INFINEON	获取价格	Power Field-Effect Transistor, 2.4A I(D), 30V, 0.18ohm, 1-Element, P-Channel, Silicon, Met