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IRLMS2002 PDF预览

IRLMS2002

更新时间: 2024-11-17 22:23:47
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
8页 95K
描述
HEXFET Power MOSFET

IRLMS2002 技术参数

是否Rohs认证: 不符合生命周期:Active
包装说明:MICRO-6Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.14
其他特性:ULTRA-LOW RESISTANCE配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:20 V最大漏极电流 (Abs) (ID):6.5 A
最大漏极电流 (ID):6.5 A最大漏源导通电阻:0.03 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G6
元件数量:1端子数量:6
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):2 W
最大脉冲漏极电流 (IDM):20 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRLMS2002 数据手册

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PD- 93758D  
IRLMS2002  
HEXFET® Power MOSFET  
l Ultra Low On-Resistance  
l N-Channel MOSFET  
l Surface Mount  
l Available in Tape & Reel  
l 2.5V Rated  
A
1
2
6
D
D
D
VDSS = 20V  
5
D
3
4
G
S
RDS(on) = 0.030Ω  
Top View  
Description  
These N-Channel MOSFETs from International Rectifier  
utilize advanced processing techniques to achieve the  
extremely low on-resistance per silicon area. This benefit  
provides the designer with an extremely efficient device for  
use in battery and load management applications.  
The Micro6 package with its customized leadframe  
produces a HEXFET power MOSFET with RDS(on) 60%  
less than a similar size SOT-23. This package is ideal for  
applications where printed circuit board space is at a  
premium. It'suniquethermaldesignandRDS(on) reduction  
enables a current-handling increase of nearly 300%  
compared to the SOT-23.  
Micro6  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
VDS  
Drain- Source Voltage  
20  
6.5  
V
ID @ TA = 25°C  
ID @ TA= 70°C  
IDM  
Continuous Drain Current, VGS @ 4.5V  
Continuous Drain Current, VGS @ 4.5V  
Pulsed Drain Current   
5.2  
A
20  
PD @TA = 25°C  
PD @TA = 70°C  
Power Dissipation  
2.0  
W
Power Dissipation  
1.3  
Linear Derating Factor  
0.016  
± 12  
W/°C  
V
VGS  
Gate-to-Source Voltage  
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to + 150  
°C  
Thermal Resistance  
Parameter  
Maximum Junction-to-Ambientƒ  
Max.  
62.5  
Units  
°C/W  
RθJA  
www.irf.com  
1
01/13/03  

IRLMS2002 替代型号

型号 品牌 替代类型 描述 数据表
IRLMS2002TR INFINEON

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