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IRLMS2002PBF

更新时间： 2024-10-30 04:23:07

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	153K
描述
HEXFET Power MOSFET

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中文翻译

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数据手册
替代型号

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IRLMS2002PBF 数据手册

PD- 95675

IRLMS2002PbF

HEXFET^®Power MOSFET

l Ultra Low On-Resistance

l N-Channel MOSFET

l Surface Mount

l Available in Tape & Reel

l 2.5V Rated

V_DSS= 20V

l Lead-Free

R_DS(on)= 0.030Ω

Top View

Description

These N-Channel MOSFETs from International Rectifier

utilize advanced processing techniques to achieve the

extremely low on-resistance per silicon area. This benefit

provides the designer with an extremely efficient device for

use in battery and load management applications.

The Micro6™ package with its customized leadframe

produces a HEXFET^®power MOSFET with R_DS(on)60%

less than a similar size SOT-23. This package is ideal for

applications where printed circuit board space is at a

premium. It'suniquethermaldesignandR_DS(on)reduction

enables a current-handling increase of nearly 300%

compared to the SOT-23.

Micro6™

Absolute Maximum Ratings

Parameter

Max.

Units

V_DS

Drain- Source Voltage

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ 4.5V

Pulsed Drain Current

6.5

5.2

P_D@T_A= 25°C

P_D@T_A= 70°C

Power Dissipation

2.0

Power Dissipation

1.3

Linear Derating Factor

0.016

± 12

W/°C

V_GS

Gate-to-Source Voltage

T_J,T_STG

Junction and Storage Temperature Range

-55 to + 150

°C

Thermal Resistance

Parameter

Maximum Junction-to-Ambient

Max.

62.5

Units

°C/W

R_θJA

www.irf.com

1/18/05

12 3 4 5 6 7 8

中文翻译

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IRLMS2002PBF 替代型号

型号	品牌	替代类型	描述	数据表
IRLMS2002TR	INFINEON	功能相似	Power Field-Effect Transistor, 6.5A I(D), 20V, 0.03ohm, 1-Element, N-Channel, Silicon, Met
IRLMS2002TRPBF	INFINEON	功能相似	Ultra Low On-Resistance
IRLMS2002	INFINEON	功能相似	HEXFET Power MOSFET

与IRLMS2002PBF相关器件

型号	品牌	获取价格	描述	数据表
IRLMS2002TR	INFINEON	获取价格	Power Field-Effect Transistor, 6.5A I(D), 20V, 0.03ohm, 1-Element, N-Channel, Silicon, Met
IRLMS2002TRPBF	INFINEON	获取价格	Ultra Low On-Resistance
IRLMS4502	INFINEON	获取价格	HEXFET Power MOSFET
IRLMS4502TR	INFINEON	获取价格	Power Field-Effect Transistor, 5.5A I(D), 12V, 0.042ohm, 1-Element, P-Channel, Silicon, Me
IRLMS5703	INFINEON	获取价格	HEXFET Power MOSFET
IRLMS5703PBF	INFINEON	获取价格	Power Field-Effect Transistor, 2.4A I(D), 30V, 0.18ohm, 1-Element, P-Channel, Silicon, Met
IRLMS5703PBF_15	INFINEON	获取价格	GENERATION V TECHNOLOGY
IRLMS5703TR	INFINEON	获取价格	Power Field-Effect Transistor, 2.3A I(D), 30V, 0.2ohm, 1-Element, P-Channel, Silicon, Meta
IRLMS5703TRPBF	INFINEON	获取价格	Generation V Technology
IRLMS6702	INFINEON	获取价格	HEXFET Power MOSFET