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IRLMS2002PBF

更新时间: 2024-11-18 04:23:07
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
8页 153K
描述
HEXFET Power MOSFET

IRLMS2002PBF 数据手册

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PD- 95675  
IRLMS2002PbF  
HEXFET® Power MOSFET  
l Ultra Low On-Resistance  
l N-Channel MOSFET  
l Surface Mount  
l Available in Tape & Reel  
l 2.5V Rated  
A
1
2
6
D
D
D
VDSS = 20V  
5
D
3
4
l Lead-Free  
G
S
RDS(on) = 0.030Ω  
Top View  
Description  
These N-Channel MOSFETs from International Rectifier  
utilize advanced processing techniques to achieve the  
extremely low on-resistance per silicon area. This benefit  
provides the designer with an extremely efficient device for  
use in battery and load management applications.  
The Micro6package with its customized leadframe  
produces a HEXFET® power MOSFET with RDS(on) 60%  
less than a similar size SOT-23. This package is ideal for  
applications where printed circuit board space is at a  
premium. It'suniquethermaldesignandRDS(on) reduction  
enables a current-handling increase of nearly 300%  
compared to the SOT-23.  
Micro6™  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
VDS  
Drain- Source Voltage  
20  
V
ID @ TA = 25°C  
ID @ TA= 70°C  
IDM  
Continuous Drain Current, VGS @ 4.5V  
Continuous Drain Current, VGS @ 4.5V  
Pulsed Drain Current   
6.5  
5.2  
A
20  
PD @TA = 25°C  
PD @TA = 70°C  
Power Dissipation  
2.0  
W
Power Dissipation  
1.3  
Linear Derating Factor  
0.016  
± 12  
W/°C  
V
VGS  
Gate-to-Source Voltage  
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to + 150  
°C  
Thermal Resistance  
Parameter  
Maximum Junction-to-Ambientƒ  
Max.  
62.5  
Units  
°C/W  
RθJA  
www.irf.com  
1
1/18/05  

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