Datasheet > IRHNA6S7160SCSD

IRHNA6S7160SCSD

更新时间： 2023-06-19 14:26:24

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	616K
描述
Rad hard, 100V, 56A, single, N-channel MOSFET, R6 in a SMD-2 package - SMD-2, 100 krad(Si) TID, COTS, On DBC carrier

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IRHNA6S7160SCSD 数据手册

IRHNA6S7160

Pre-Irradiation

IMPORTANT NOTICE

The information given in this document shall be in no event regarded as guarantee of conditions or characteristic. The

data contained herein is a characterization of the component based on internal standards and is intended to

demonstrate and provide guidance for typical part performance. It will require further evaluation, qualification and

analysis to determine suitability in the application environment to confirm compliance to your system requirements.

With respect to any example hints or any typical values stated herein and/or any information regarding the application of

the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind including without

limitation warranties on non- infringement of intellectual property rights and any third party.

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this

document and any applicable legal requirements, norms and standards concerning customer’s product and any use of

the product of Infineon Technologies in customer’s applications.

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of any

customer’s technical departments to evaluate the suitability of the product for the intended applications and the

completeness of the product information given in this document with respect to applications.

For further information on the product, technology, delivery terms and conditions and prices, please contact your local

sales representative or go to (www.infineon.com/hirel).

WARNING

Due to technical requirements products may contain dangerous substances. For information on the types in question,

please contact your nearest Infineon Technologies office.

2018-07-05

International Rectifier HiRel Products, Inc.

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型号	品牌	获取价格	描述	数据表
IRHNA6S7260	INFINEON	获取价格	Rad hard, 200V, 40A, single, N-channel MOSFET, R6 in a SMD-2 package - SMD-2, 100 krad(Si)
IRHNA6S7260SCS	INFINEON	获取价格	Rad hard, 200V, 40A, single, N-channel MOSFET, R6 in a SMD-2 package - SMD-2, 100 krad(Si)
IRHNA6S7264	INFINEON	获取价格	Rad hard, 250V, 31.5A, single, N-channel MOSFET, R6 in a SMD-2 package - SMD-2, 100 krad(S
IRHNA6S7264SCS	INFINEON	获取价格	Rad hard, 250V, 31.5A, single, N-channel MOSFET, R6 in a SMD-2 package - SMD-2, 100 krad(S
IRHNA7064	INFINEON	获取价格	TRANSISTOR N-CHANNEL
IRHNA7160	INFINEON	获取价格	TRANSISTOR N-CHANNEL
IRHNA7160PBF	INFINEON	获取价格	Power Field-Effect Transistor, 51A I(D), 100V, 0.045ohm, 1-Element, N-Channel, Silicon, Me
IRHNA7260	INFINEON	获取价格	TRANSISTOR N-CHANNEL
IRHNA7260SCS	INFINEON	获取价格	Power Field-Effect Transistor, 43A I(D), 200V, 0.077ohm, 1-Element, N-Channel, Silicon, Me
IRHNA7260SESCSPBF	INFINEON	获取价格	暂无描述