Datasheet > IRHNA6S7160SCSD

IRHNA6S7160SCSD

更新时间： 2023-06-19 14:26:24

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	616K
描述
Rad hard, 100V, 56A, single, N-channel MOSFET, R6 in a SMD-2 package - SMD-2, 100 krad(Si) TID, COTS, On DBC carrier

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IRHNA6S7160SCSD 数据手册

IRHNA6S7160

Pre-Irradiation

1000

100

1000

100

VGS

15V

12V

VGS

15V

12V

10V

9.0V

8.0V

7.0V

6.0V

TOP

10V

9.0V

8.0V

7.0V

6.0V

BOTTOM 5.0V

5.0V

60s PULSE WIDTH

Tj = 25°C

60s PULSE WIDTH

Tj = 150°C

0.1

100

0.1

100

, Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

1000

100

2.5

2.0

1.5

1.0

0.5

0.0

= 56A

= 150°C

= 25°C

= 25V



= 12V

s PULSE WIDTH

1.0

5.5

6.5

7.5

8.5

-60 -40 -20

20 40 60 80 100 120 140 160

, Gate-to-Source Voltage (V)

, Junction Temperature (°C)

Fig 4. Normalized On-Resistance Vs.

Fig 3. Typical Transfer Characteristics

Temperature

= 56A

= 150°C

= 25°C

= 150°C

= 25°C

= 12V

120

160

200

240

, Drain Current (A)

Gate -to -Source Voltage (V)

GS,

Fig 6. Typical On-Resistance Vs Drain Current

Fig 5. Typical On-Resistance Vs Gate Voltage

International Rectifier HiRel Products, Inc.

2018-07-05

1 2 345 6 7...9

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