Datasheet > IRHNA6S7160SCSD

IRHNA6S7160SCSD

更新时间： 2023-06-19 14:26:24

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	616K
描述
Rad hard, 100V, 56A, single, N-channel MOSFET, R6 in a SMD-2 package - SMD-2, 100 krad(Si) TID, COTS, On DBC carrier

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IRHNA6S7160SCSD 数据手册

IRHNA6S7160

Pre-Irradiation

Radiation Characteristics

IR HiRel radiation hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance

program at IR Hirel is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose

(per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using

the same drive circuitry and test conditions in order to provide a direct comparison.

Table1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation 

Up to 300 kRads (Si)¹

Symbol

Parameter

Units

Test Conditions

Min.

100

2.0

Max.

–––

4.0

BV_DSS

V_GS(th)

I_GSS

Drain-to-Source Breakdown Voltage

Gate Threshold Voltage

V_GS= 0V, I_D= 1.0mA

V_DS= V_GS, I_D= 1.0mA

V_GS= 20V

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Zero Gate Voltage Drain Current

–––

100

-100

µA

I_GSS

V_GS= -20V

I_DSS

V_DS= 80V, V_GS= 0V

Static Drain-to-Source 

On-State Resistance (TO-3)

R_DS(on)

–––

0.011

V_GS= 12V, I_D= 56A 



Static Drain-to-Source 

On-State Resistance (SMD-2)

R_DS(on)

V_SD

–––

0.010

1.2

V_GS= 12V, I_D= 56A 

V_GS= 0V, I_D= 56A 



Diode Forward Voltage 

1. Part numbers IRHNA6S7160 and IRHNA6S3160

IR HiRel radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects

(SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.

Table 2. Typical Single Event Effect Safe Operating Area

VDS (V)

LET

Energy

(MeV)

Range

(µm)

@ VGS = @ VGS = @ VGS = @ VGS = @ VGS = @ VGS = @ VGS =

(MeV/(mg/cm²))

-5V

-10V

-15V

-17V

-19V

-20V

37.7

60.5

380

697

100

–––

100

–––

56.7

–––

120

100

LET = 37.7

LET = 60.5

-5

-10

Bias VGS (V)

-15

-20

Fig a. Typical Single Event Effect, Safe Operating Area

For Footnotes, refer to the page 2.

2018-07-05

International Rectifier HiRel Products, Inc.

1 234 5 6 7...9

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与IRHNA6S7160SCSD相关器件

型号	品牌	获取价格	描述	数据表
IRHNA6S7260	INFINEON	获取价格	Rad hard, 200V, 40A, single, N-channel MOSFET, R6 in a SMD-2 package - SMD-2, 100 krad(Si)
IRHNA6S7260SCS	INFINEON	获取价格	Rad hard, 200V, 40A, single, N-channel MOSFET, R6 in a SMD-2 package - SMD-2, 100 krad(Si)
IRHNA6S7264	INFINEON	获取价格	Rad hard, 250V, 31.5A, single, N-channel MOSFET, R6 in a SMD-2 package - SMD-2, 100 krad(S
IRHNA6S7264SCS	INFINEON	获取价格	Rad hard, 250V, 31.5A, single, N-channel MOSFET, R6 in a SMD-2 package - SMD-2, 100 krad(S
IRHNA7064	INFINEON	获取价格	TRANSISTOR N-CHANNEL
IRHNA7160	INFINEON	获取价格	TRANSISTOR N-CHANNEL
IRHNA7160PBF	INFINEON	获取价格	Power Field-Effect Transistor, 51A I(D), 100V, 0.045ohm, 1-Element, N-Channel, Silicon, Me
IRHNA7260	INFINEON	获取价格	TRANSISTOR N-CHANNEL
IRHNA7260SCS	INFINEON	获取价格	Power Field-Effect Transistor, 43A I(D), 200V, 0.077ohm, 1-Element, N-Channel, Silicon, Me
IRHNA7260SESCSPBF	INFINEON	获取价格	暂无描述

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