Datasheet > IRHNA6S7160SCSD

IRHNA6S7160SCSD

更新时间： 2023-06-19 14:26:24

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	616K
描述
Rad hard, 100V, 56A, single, N-channel MOSFET, R6 in a SMD-2 package - SMD-2, 100 krad(Si) TID, COTS, On DBC carrier

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IRHNA6S7160SCSD 数据手册

IRHNA6S7160

Pre-Irradiation

130

125

120

115

110

105

100

5.5

5.0

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0

= 1.0mA

= 50µA

= 250µA

= 1.0mA

= 150mA

-60 -40 -20

20 40 60 80 100 120 140 160

, Temperature ( °C )

-60 -40 -20

20 40 60 80 100 120 140 160

, Temperature ( °C )

Fig 7. Typical Drain-to-Source

Fig 8. Typical Threshold Voltage Vs

Breakdown Voltage Vs Temperature

Temperature

14000

12000

10000

8000

6000

4000

2000

= 0V,

f = 1 MHz

= C + C , C

SHORTED

iss

rss

oss

= C

= C + C

iss

oss

rss

100

, Drain-to-Source Voltage (V)

Fig 10. Typical Gate Charge Vs.

Fig 9. Typical Capacitance Vs.

Gate-to-Source Voltage

Drain-to-Source Voltage

1000

100

= 150°C

°C

= 0V

1.0

0.4

0.6

0.8

1.0

1.2

1.4

, Source-to-Drain Voltage (V)

Fig 12. Maximum Drain Current Vs.Case Temperature

2018-07-05

Fig 11. Typical Source-Drain Diode Forward Voltage

International Rectifier HiRel Products, Inc.

1 2 3 456 7 8 9

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