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IRHNA67260 PDF预览

IRHNA67260

更新时间: 2024-02-09 23:22:21
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
8页 141K
描述
RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-2)

IRHNA67260 技术参数

生命周期:Active包装说明:SMD-2, 3 PIN
Reach Compliance Code:compliant风险等级:5.82
雪崩能效等级(Eas):268 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:200 V
最大漏极电流 (Abs) (ID):56 A最大漏极电流 (ID):56 A
最大漏源导通电阻:0.028 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-CBCC-N3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C最低工作温度:-55 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:RECTANGULAR
封装形式:CHIP CARRIER极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):250 W最大脉冲漏极电流 (IDM):224 A
参考标准:RH - 100K Rad(Si)表面贴装:YES
端子形式:NO LEAD端子位置:BOTTOM
晶体管应用:SWITCHING晶体管元件材料:SILICON
最大关闭时间(toff):150 ns最大开启时间(吨):200 ns

IRHNA67260 数据手册

 浏览型号IRHNA67260的Datasheet PDF文件第2页浏览型号IRHNA67260的Datasheet PDF文件第3页浏览型号IRHNA67260的Datasheet PDF文件第4页浏览型号IRHNA67260的Datasheet PDF文件第5页浏览型号IRHNA67260的Datasheet PDF文件第6页浏览型号IRHNA67260的Datasheet PDF文件第7页 
IRHNA67260  
Footnotes:  
Pre-Irradiation  
à Pulse width 300 µs; Duty Cycle 2%  
Ä Total Dose Irradiation with V Bias.  
À
Repetitive Rating; Pulse width limited by  
maximum junction temperature.  
GS  
= 0 during  
12 volt V  
applied and V  
DS  
Á
V
= 25V, starting T = 25°C, L= 0.17mH  
J
GS  
irradiation per MIL-STD-750, method 1019, condition A.  
DD  
Peak I = 56A, V  
= 12V  
L
GS  
Å Total Dose Irradiation with V Bias.  
 I  
56A, di/dt 875A/µs,  
DS  
applied and V = 0 during  
GS  
SD  
DD  
160 volt V  
V
200V, T 150°C  
DS  
irradiation per MlL-STD-750, method 1019, condition A.  
J
Case Outline and Dimensions — SMD-2  
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105  
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776  
TAC Fax: (310) 252-7903  
Visit us at www.irf.com for sales contact information.  
Data and specifications subject to change without notice. 02/2006  
8
www.irf.com  

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