PD-97868A
IRHNA6S7160
100V, N-CHANNEL
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-2)
TECHNOLOGY
R
6
Product Summary
Part Number
IRHNA6S7160
IRHNA6S3160
Radiation Level RDS(on)
ID
100 kRads(Si)
300 kRads(Si)
56A*
56A*
0.010
0.010
SMD-2
Features
Description
Single Event Effect (SEE) Hardened
Low RDS(on)
Low Total Gate Charge
Simple Drive Requirements
Hermetically Sealed
Ceramic Package
Light Weight
Surface Mount
ESD Rating: Class 3A per MIL-STD-750, Method 1020
IRHNA6S7160 is a part of the International Rectifier HiRel
family of products. IR HiRel R6 S-line technology provides
high performance power MOSFETs for space applications.
These devices have been characterized for both Total
Dose and Single Event Effect (SEE) with useful
performance up to LET of 60 (MeV/(mg/cm2). The
combination of low RDS(on) and low gate charge reduces
the power losses in switching applications such as DC-DC
converters and motor controllers. These devices retain all
of the well established advantages of MOSFETs such as
voltage control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
Absolute Maximum Ratings
Pre-Irradiation
Symbol
Parameter
Value
Units
56*
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
56*
224
250
2.0
A
IDM @ TC = 25°C
PD @ TC = 25°C
Pulsed Drain Current
W
W/°C
V
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
±20
462
VGS
EAS
IAR
mJ
A
56
25
mJ
V/ns
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Lead Temperature
5.0
-55 to + 150
TSTG
°C
g
300 (for 5s)
3.3 (Typical)
Weight
* Current is limited by package
For Footnotes, refer to the page 2.
1
2018-07-05
International Rectifier HiRel Products, Inc.