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IRHNA6S7160SCSD PDF预览

IRHNA6S7160SCSD

更新时间: 2023-06-19 14:26:24
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
9页 616K
描述
Rad hard, 100V, 56A, single, N-channel MOSFET, R6 in a SMD-2 package - SMD-2, 100 krad(Si) TID, COTS, On DBC carrier

IRHNA6S7160SCSD 数据手册

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PD-97868A  
IRHNA6S7160  
100V, N-CHANNEL  
RADIATION HARDENED  
POWER MOSFET  
SURFACE MOUNT (SMD-2)  
TECHNOLOGY  
R
6
Product Summary  
Part Number  
IRHNA6S7160  
IRHNA6S3160  
Radiation Level RDS(on)  
ID  
100 kRads(Si)  
300 kRads(Si)  
56A*  
56A*  
0.010  
0.010  
Features  
Description  
Single Event Effect (SEE) Hardened  
Low RDS(on)  
Low Total Gate Charge  
Simple Drive Requirements  
Hermetically Sealed  
Ceramic Package  
Light Weight  
Surface Mount  
ESD Rating: Class 3A per MIL-STD-750, Method 1020  
IRHNA6S7160 is a part of the International Rectifier HiRel  
family of products. IR HiRel R6 S-line technology provides  
high performance power MOSFETs for space applications.  
These devices have been characterized for both Total  
Dose and Single Event Effect (SEE) with useful  
performance up to LET of 60 (MeV/(mg/cm2). The  
combination of low RDS(on) and low gate charge reduces  
the power losses in switching applications such as DC-DC  
converters and motor controllers. These devices retain all  
of the well established advantages of MOSFETs such as  
voltage control, fast switching, ease of paralleling and  
temperature stability of electrical parameters.  
Absolute Maximum Ratings  
Pre-Irradiation  
Symbol  
Parameter  
Value  
Units  
56*  
ID @ VGS = 12V, TC = 25°C Continuous Drain Current  
ID @ VGS = 12V, TC = 100°C Continuous Drain Current  
56*  
224  
250  
2.0  
A
IDM @ TC = 25°C  
PD @ TC = 25°C  
Pulsed Drain Current  
W
W/°C  
V
Maximum Power Dissipation  
Linear Derating Factor  
Gate-to-Source Voltage  
Single Pulse Avalanche Energy   
Avalanche Current   
±20  
462  
VGS  
EAS  
IAR  
mJ  
A
56  
25  
mJ  
V/ns  
EAR  
dv/dt  
TJ  
Repetitive Avalanche Energy   
Peak Diode Recovery dv/dt   
Operating Junction and  
Storage Temperature Range  
Lead Temperature  
5.0  
-55 to + 150  
TSTG  
°C  
g
300 (for 5s)  
3.3 (Typical)  
Weight  
* Current is limited by package  
For Footnotes, refer to the page 2.  
1
2018-07-05  
International Rectifier HiRel Products, Inc.  

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