Datasheet > IRHNA67264SCS

IRHNA67264SCS

更新时间： 2024-11-06 11:01:15

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	465K
描述
Rad hard, 250V, 31.5A, single, N-channel MOSFET, R6 in a SMD-2 package - SMD-2, 100 krad(Si) TID, QIRL

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IRHNA67264SCS 数据手册

PD-96990C

IRHNA67264

JANSR2N7585U2

RADIATION HARDENED

POWER MOSFET

SURFACE MOUNT (SMD-2)

250V, N-CHANNEL

REF: MIL-PRF-19500/760

TECHNOLOGY

Product Summary

Part Number

IRHNA67264

IRHNA63264

Radiation Level RDS(on)

I_D

QPL Part Number

JANSR2N7585U2

JANSF2N7585U2

100 kRads(Si)

300 kRads(Si)

50A

0.040

SMD-2

Features

Description

 Single Event Effect (SEE) Hardened

 Low RDS(on)

 Low Total Gate Charge

 Simple Drive Requirements

 Hermetically Sealed

 Electrically Isolated

 Ceramic Package

 Light Weight

 Surface Mount

IR HiRel R6 technology provides high performance power

MOSFETs for space applications. These devices have

been characterized for both Total Dose and Single Event

Effect (SEE) with useful performance up to LET of

90 (MeV/(mg/cm²). The combination of low RDS(on) and

low gate charge reduces the power losses in switching

applications such as DC-DC converters and motor

controllers. These devices retain all of the well established

advantages of MOSFETs such as voltage control, fast

switching and temperature stability of electrical parameters.

 ESD Rating: Class 3A per MIL-STD-750, Method 1020

Absolute Maximum Ratings

Pre-Irradiation

Symbol

Value

Parameter

Units

I_D1@ V_GS= 12V, T_C= 25°C Continuous Drain Current

I_D2@ V_GS= 12V, T_C= 100°C Continuous Drain Current

31.5

200

250

2.0

±20

240

I_DM@ T_C= 25°C

P_D@T_C= 25°C

Pulsed Drain Current 

W/°C

Maximum Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy 

Avalanche Current 

V_GS

E_AS

I_AR

V/ns

E_AR

dv/dt

T_J

Repetitive Avalanche Energy 

Peak Diode Recovery dv/dt 

Operating Junction and

Storage Temperature Range

Lead Temperature

5.0

-55 to + 150

T_STG

°C

300 (for 5s)

3.3 (Typical)

Weight

For Footnotes, refer to the page 2.

2018-10-26

International Rectifier HiRel Products, Inc.

12 3 4 5 6 7...9

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与IRHNA67264SCS相关器件

型号	品牌	获取价格	描述	数据表
IRHNA67264SCSA	INFINEON	获取价格	Power Field-Effect Transistor,
IRHNA6S3160	INFINEON	获取价格	Power Field-Effect Transistor,
IRHNA6S7160	INFINEON	获取价格	Rad hard, 100V, 56A, single, N-channel MOSFET, R6 in a SMD-2 package - SMD-2, 100 krad(Si)
IRHNA6S7160SCS	INFINEON	获取价格	Power Field-Effect Transistor,
IRHNA6S7160SCSD	INFINEON	获取价格	Rad hard, 100V, 56A, single, N-channel MOSFET, R6 in a SMD-2 package - SMD-2, 100 krad(Si)
IRHNA6S7260	INFINEON	获取价格	Rad hard, 200V, 40A, single, N-channel MOSFET, R6 in a SMD-2 package - SMD-2, 100 krad(Si)
IRHNA6S7260SCS	INFINEON	获取价格	Rad hard, 200V, 40A, single, N-channel MOSFET, R6 in a SMD-2 package - SMD-2, 100 krad(Si)
IRHNA6S7264	INFINEON	获取价格	Rad hard, 250V, 31.5A, single, N-channel MOSFET, R6 in a SMD-2 package - SMD-2, 100 krad(S
IRHNA6S7264SCS	INFINEON	获取价格	Rad hard, 250V, 31.5A, single, N-channel MOSFET, R6 in a SMD-2 package - SMD-2, 100 krad(S
IRHNA7064	INFINEON	获取价格	TRANSISTOR N-CHANNEL

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