IRHNA67260PBF

更新时间： 2024-11-05 13:08:51

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲
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IRHNA67260PBF 数据手册

PD-94342D

RADIATION HARDENED

POWER MOSFET

SURFACE-MOUNT (SMD-2)

IRHNA67260

200V, N-CHANNEL

TECHNOLOGY

Product Summary

Part Number Radiation Level RDS(on)

IRHNA67260 100K Rads (Si) 0.028Ω 56A^∗

IRHNA63260 300K Rads (Si) 0.028Ω 56A^∗

SMD-2

International Rectifier’s R6^TMtechnology provides

superior power MOSFETs for space applications.

These devices have improved immunity to Single

Event Effect (SEE) and have been characterized for

useful performance with Linear Energy Transfer

(LET) up to 90MeV/(mg/cm²).

Features:

Low RDS(on)

Fast Switching

Single Event Effect (SEE) Hardened

Low Total Gate Charge

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Surface Mount

Their combination of very low R

and faster

DS(on)

switching times reduces power loss and increases

power density in today’s high speed switching

applications such as DC-DC converters and motor

controllers. These devices retain all of the well

established advantages of MOSFETs such as voltage

control, ease of paralleling and temperature stability

of electrical parameters.

Ceramic Package

Light Weight

Pre-Irradiation

Absolute Maximum Ratings

Parameter

= 12V, T = 25°C Continuous Drain Current

Units

@ V

56^∗

@ V

= 12V, T = 100°C Continuous Drain Current

224

Pulsed Drain Current À

Max. Power Dissipation

Linear Derating Factor

@ T = 25°C

250

W/°C

2.0

Gate-to-Source Voltage

Single Pulse Avalanche Energy Á

Avalanche Current À

±20

268

56^∗

Repetitive Avalanche Energy À

Peak Diode Recovery dv/dt Â

Operating Junction

V/ns

dv/dt

5.0

-55 to 150

^oC

Storage Temperature Range

STG

Pckg. Mounting Surface Temp.

Weight

300 (for 5s)

3.3 (Typical)

∗ Current is limited by Package

For footnotes refer to the last page

www.irf.com

02/16/06

12 3 4 5 6 7 8

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