PD-94342D
RADIATION HARDENED
POWER MOSFET
SURFACE-MOUNT (SMD-2)
IRHNA67260
200V, N-CHANNEL
TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on)
ID
IRHNA67260 100K Rads (Si) 0.028Ω 56A∗
IRHNA63260 300K Rads (Si) 0.028Ω 56A∗
SMD-2
International Rectifier’s R6TM technology provides
superior power MOSFETs for space applications.
These devices have improved immunity to Single
Event Effect (SEE) and have been characterized for
useful performance with Linear Energy Transfer
(LET) up to 90MeV/(mg/cm2).
Features:
n
n
n
n
n
n
n
n
n
n
Low RDS(on)
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Their combination of very low R
and faster
DS(on)
switching times reduces power loss and increases
power density in today’s high speed switching
applications such as DC-DC converters and motor
controllers. These devices retain all of the well
established advantages of MOSFETs such as voltage
control, ease of paralleling and temperature stability
of electrical parameters.
Ceramic Package
Light Weight
Pre-Irradiation
Absolute Maximum Ratings
Parameter
= 12V, T = 25°C Continuous Drain Current
Units
I
D
@ V
56∗
GS
C
A
I
@ V
= 12V, T = 100°C Continuous Drain Current
40
224
D
GS
C
I
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
DM
@ T = 25°C
P
250
W
W/°C
V
D
C
2.0
V
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
±20
GS
E
268
56∗
mJ
A
AS
I
AR
E
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
25
mJ
V/ns
AR
dv/dt
5.0
T
-55 to 150
J
oC
g
T
Storage Temperature Range
STG
Pckg. Mounting Surface Temp.
Weight
300 (for 5s)
3.3 (Typical)
∗ Current is limited by Package
For footnotes refer to the last page
www.irf.com
1
02/16/06