IRHMS68260

更新时间： 2024-09-15 04:22:07

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲局域网
页数	文件大小	规格书
8页	146K
描述
RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA)

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IRHMS68260 数据手册

PD - 94667A

RADIATION HARDENED

POWER MOSFET

THRU-HOLE (Low-Ohmic TO-254AA)

IRHMS67260

200V, N-CHANNEL

TECHNOLOGY

Product Summary

Part Number Radiation Level RDS(on)

IRHMS67260 100K Rads (Si) 0.029Ω 45A*

IRHMS63260 300K Rads (Si) 0.029Ω 45A*

IRHMS64260 600K Rads (Si) 0.029Ω 45A*

IRHMS68260 1000K Rads (Si) 0.029Ω 45A*

Low-Ohmic

TO-254AA

International Rectifier’s R6^TMtechnology provides

superior power MOSFETs for space applications.

These devices have improved immunity to Single

Event Effect (SEE) and have been characterized for

useful performance with Linear Energy Transfer

(LET) up to 90MeV/(mg/cm²).

Features:

Low RDS(on)

Fast Switching

Single Event Effect (SEE) Hardened

Low Total Gate Charge

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Ceramic Eyelets

Their combination of very low R

and faster

DS(on)

switching times reduces power loss and increases

power density in today’s high speed switching appli-

cations such as DC-DC converters and motor con-

trollers. These devices retain all of the well

established advantages of MOSFETs such as volt-

age control, ease of paralleling and temperature sta-

bility of electrical parameters.

Electrically Isolated

Light Weight

Pre-Irradiation

Absolute Maximum Ratings

Parameter

Units

@ V

= 12V, T = 25°C

Continuous Drain Current

45*

= 12V, T = 100°C Continuous Drain Current

Pulsed Drain Current ➀

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

180

@ T = 25°C

208

W/°C

1.67

±20

Single Pulse Avalanche Energy ➀

Avalanche Current ➀

344

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt ➀

Operating Junction

20.8

5.4

V/ns

dv/dt

-55 to 150

^oC

Storage Temperature Range

STG

Lead Temperature

Weight

300 (0.063 in. /1.6 mm from case for 10s)

9.3 (Typical)

* Current is limited by package

For footnotes refer to the last page

www.irf.com

10/07/03

12 3 4 5 6 7 8

中文翻译

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与IRHMS68260相关器件

型号	品牌	获取价格	描述	数据表
IRHMS6S3160	INFINEON	获取价格	Power Field-Effect Transistor,
IRHMS6S3260	INFINEON	获取价格	Power Field-Effect Transistor, 45A I(D), 200V, 0.029ohm, 1-Element, N-Channel, Silicon, Me
IRHMS6S7160	INFINEON	获取价格	Power Field-Effect Transistor,
IRHMS6S7160SCS	INFINEON	获取价格	Power Field-Effect Transistor,
IRHMS6S7260	INFINEON	获取价格	Power Field-Effect Transistor, 45A I(D), 200V, 0.029ohm, 1-Element, N-Channel, Silicon, Me
IRHMS6S7260SCS	INFINEON	获取价格	Rad hard, 200V, 45A, single, N-channel MOSFET, R6 in a TO-254AA Low Ohmic package - TO-254
IRHMS6S7264	INFINEON	获取价格	Rad hard, 250V, 45A, single, N-channel MOSFET, R6 in a TO-254AA Low Ohmic package - TO-254
IRHMS6S7264SCS	INFINEON	获取价格	Rad hard, 250V, 45A, single, N-channel MOSFET, R6 in a TO-254AA Low Ohmic package - TO-254
IRHMS9A3064	INFINEON	获取价格	Rad hard, 60V, 45A, single, N-channel MOSFET, R9 in a TO-254AA Low Ohmic package - TO-254A
IRHMS9A3064SCS	INFINEON	获取价格	Rad hard, 60V, 45A, single, N-channel MOSFET, R9 in a TO-254AA Low Ohmic package - TO-254A

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