Datasheet > IRHMS9A3264

IRHMS9A3264

更新时间： 2024-09-16 14:56:23

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
14页	617K
描述
Rad hard, 250V, 45A, single, N-channel MOSFET, R9 in a TO-254AA Low Ohmic package - TO-254AA Low Ohmic package, 300 krad(Si) TID, COTS

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IRHMS9A3264 数据手册

IRHMS9A7264 (JANSR2N7658T1)

PD-97959C

Radiation Hardened Power MOSFET

Thru-Hole (TO-254AA Low Ohmic)

250V, 45A, N-channel, R9 Superjunction Technology

Product Summary

Features

•

BV_DSS: 250V

I_D:45A*

R_{DS (on), max:}19.5m

Q_Gmax:165nC

•

Single event effect (SEE) hardened

(up to LET of 88.2 MeV·cm²/mg)

•

Low R_DS(on)

Fast switching

DLA Ref_:MIL-PRF-19500/777

Low total gate charge

Simple drive requirements

Hermetically sealed

Electrically isolated

Ceramic eyelets

Light weight

ESD rating: Class 3B per MIL-STD-750, Method 1020

TO-254AA Low Ohmic

Potential Applications

•

DC-DC converter

Motor drives

•

Product Validation

Qualified according to MIL-PRF-19500 for space applications

Description

IR HiRel R9 technology provides superior power MOSFETs for space applications. These devices have improved

immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy

Transfer (LET) up to 88.2 MeV·cm²/mg. Their combination of low R_DS(on)and fast switching times will allow for

better performance in applications such as DC-DC converters or motor drives. These devices retain all of the well-

established advantages of MOSFETs such as voltage control, fast switching and temperature stability of electrical

parameters.

Ordering Information

Table 1

Part number

IRHMS9A7264

Ordering options

Package

Screening Level

COTS

TID Level

Low-Ohmic TO-254AA

100 krad (Si)

300 krad (Si)

JANSR2N7658T1

IRHMS9A3264

JANS

COTS

JANSF2N7658T1

JANS

Please read the Important Notice and Warnings at the end of this document

page 1 of 14

www.infineon.com/irhirel

2023-07-17

12 3 4 5 6 7...14

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