Datasheet > IRHMS6S7264SCS

IRHMS6S7264SCS

更新时间： 2024-11-19 14:56:47

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	387K
描述
Rad hard, 250V, 45A, single, N-channel MOSFET, R6 in a TO-254AA Low Ohmic package - TO-254AA Low Ohmic, 100 krad(Si) TID, QIRL

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IRHMS6S7264SCS 数据手册

PD-97865

IRHMS6S7264

250V, N-CHANNEL

RADIATION HARDENED

TECHNOLOGY

POWER MOSFET

THRU-HOLE (LOW OHMIC - TO-254AA)

Product Summary

Part Number

Radiation Level RDS(on)

I_D

IRHMS6S7264 100 kRads(Si)

45A

0.041

IRHMS6S3264

300 kRads(Si)

Low-Ohmic

TO-254AA

Description

Features

 Low RDS(on)

 Fast Switching

 Single Event Effect (SEE) Hardened

 Low Total Gate Charge

 Simple Drive Requirements

 Ease of Paralleling

 Hermetically Sealed

 Ceramic Eyelets

 Electrically Isolated

 Light Weight

IR HiRel R6 S-line technology provides high performance

power MOSFETs for space applications. These devices

have been characterized for both Total Dose and Single

Event Effect (SEE) with useful performance up to LET of

60 (MeV/(mg/cm²). The combination of low RDS(on) and

low gate charge reduces the power losses in switching

applications such as DC-DC converters and motor

controllers. These devices retain all of the well established

advantages of MOSFETs such as voltage control, fast

switching, ease of paralleling and temperature stability of

electrical parameters.

 ESD Rating: Class 3A per MIL-STD-750, Method 1020

Absolute Maximum Ratings

Parameter

Pre-Irradiation

Units

Continuous Drain Current

Pulsed Drain Current 

Maximum Power Dissipation

I_D@ V_GS= 12V, T_C= 25°C

I_D@ V_GS= 12V, T_C= 100°C

I_DM

28.5

180

208

1.67

W/°C

P_D@T_C= 25°C

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy 

Avalanche Current 

± 20

251

V_GS

E_AS

I_AR

20.8

V/ns

Repetitive Avalanche Energy 

Peak Diode Recovery dv/dt 

Operating Junction and

Storage Temperature Range

Lead Temperature

E_AR

dv/dt

T_J

4.4

-55 to + 150

T_STG

°C

300 (0.063 in. /1.6 mm from case for 10s)

9.3 (Typical)

Weight

For footnotes refer to the page 2.

2017-04-24

12 3 4 5 6 7...9

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与IRHMS6S7264SCS相关器件

型号	品牌	获取价格	描述	数据表
IRHMS9A3064	INFINEON	获取价格	Rad hard, 60V, 45A, single, N-channel MOSFET, R9 in a TO-254AA Low Ohmic package - TO-254A
IRHMS9A3064SCS	INFINEON	获取价格	Rad hard, 60V, 45A, single, N-channel MOSFET, R9 in a TO-254AA Low Ohmic package - TO-254A
IRHMS9A3264	INFINEON	获取价格	Rad hard, 250V, 45A, single, N-channel MOSFET, R9 in a TO-254AA Low Ohmic package - TO-254
IRHMS9A7064	INFINEON	获取价格	Rad hard, 60V, 45A, single, N-channel MOSFET, R9 in a TO-254AA Low Ohmic package - TO-254A
IRHMS9A7064SCS	INFINEON	获取价格	Rad hard, 60V, 45A, single, N-channel MOSFET, R9 in a TO-254AA Low Ohmic package - TO-254A
IRHMS9A7264	INFINEON	获取价格	Rad hard, 250V, 45A, single, N-channel MOSFET, R9 in a TO-254AA Low Ohmic package - TO-254
IRHMS9A93064	INFINEON	获取价格	Rad hard, -60V, -45A, P-channel MOSFET, R9 in SupIR-SMD package - SupIR-SMD, 300 krad(Si)
IRHMS9A93160	INFINEON	获取价格	Rad hard, -100V, -45A, P-channel MOSFET, R9 i
IRHMS9A93260	INFINEON	获取价格	Rad hard, -200V, -45A, P-channel MOSFET, R9 in Low-Ohmic TO-254AA package - 300 krad(Si) T
IRHMS9A97160	INFINEON	获取价格	Rad hard, -100V, -45A, P-channel MOSFET, R9 in Low-Ohmic TO-254AA package - 100 krad(Si) T

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