Datasheet > IRHMS9A3064SCS

IRHMS9A3064SCS

更新时间： 2024-11-21 14:56:47

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	1029K
描述
Rad hard, 60V, 45A, single, N-channel MOSFET, R9 in a TO-254AA Low Ohmic package - TO-254AA Low Ohmic, 300 krad(Si) TID, QIRL

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRHMS9A3064SCS 数据手册

PD-97893C

IRHMS9A7064

JANSR2N7652T1

60V, N-CHANNEL

RADIATION HARDENED

POWER MOSFET

THRU-HOLE (Low-Ohmic TO-254AA)

REF: MIL-PRF-19500/777

TECHNOLOGY

Product Summary

Part Number Radiation Level RDS(on)

I_D

QPL Part Number

JANSR2N7652T1

JANSF2N7652T1

IRHMS9A7064

IRHMS9A3064

100 kRads (Si)

300 kRads (Si)

45A*

7.0m

Low-Ohmic

TO-254AA

Description

Features



Low RDS(on)

IR HiRel R9 technology provides superior power MOSFETs

for space applications. These devices have improved

immunity to Single Event Effect (SEE) and have been

characterized for useful performance with Linear Energy

Transfer (LET) up to 90MeV/(mg/cm²). Their combination of

low RDS(on) and faster switching times reduces the power

losses and increases power density in today’s high speed

switching applications such as DC-DC converters and motor

controllers. These devices retain all of the well established

advantages of MOSFETs such as voltage control, fast

switching temperature stability of electrical parameters.

Fast Switching

Single Event Effect (SEE) Hardened

Low Total Gate Charge

Simple Drive Requirements

Hermetically Sealed

Electrically Isolated

Ceramic Eyelets

Light Weight

ESD Rating: Class 3B per MIL-STD-750,

Method 1020

Absolute Maximum Ratings

Pre-Irradiation

Value

Symbol

Parameter

Units

I_D1@ V_GS= 12V, T_C= 25°C Continuous Drain Current

I_D2@ V_GS= 12V, T_C= 100°C Continuous Drain Current

45*

180

I_DM@T_C= 25°C

P_D@T_C= 25°C

Pulsed Drain Current 

W/°C

Maximum Power Dissipation

208

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy 

Avalanche Current 

1.67

V_GS

E_AS

I_AR

± 20

5600

E_AR

dv/dt

T_J

20.8

Repetitive Avalanche Energy 

Peak Diode Recovery dv/dt 

Operating Junction and

Storage Temperature Range

Lead Temperature

V/ns

5.4

-55 to + 150

T_STG

°C

300 (0.063 in./1.6mm from case for 10s)

9.3 (Typical)

Weight

* Current is limited by package

For Footnotes, refer to the page 2.

2021-03-08

International Rectifier HiRel Products, Inc.

12 3 4 5 6 7...9

中文翻译

下载PDF

与IRHMS9A3064SCS相关器件

型号	品牌	获取价格	描述	数据表
IRHMS9A3264	INFINEON	获取价格	Rad hard, 250V, 45A, single, N-channel MOSFET, R9 in a TO-254AA Low Ohmic package - TO-254
IRHMS9A7064	INFINEON	获取价格	Rad hard, 60V, 45A, single, N-channel MOSFET, R9 in a TO-254AA Low Ohmic package - TO-254A
IRHMS9A7064SCS	INFINEON	获取价格	Rad hard, 60V, 45A, single, N-channel MOSFET, R9 in a TO-254AA Low Ohmic package - TO-254A
IRHMS9A7264	INFINEON	获取价格	Rad hard, 250V, 45A, single, N-channel MOSFET, R9 in a TO-254AA Low Ohmic package - TO-254
IRHMS9A93064	INFINEON	获取价格	Rad hard, -60V, -45A, P-channel MOSFET, R9 in SupIR-SMD package - SupIR-SMD, 300 krad(Si)
IRHMS9A93160	INFINEON	获取价格	Rad hard, -100V, -45A, P-channel MOSFET, R9 i
IRHMS9A93260	INFINEON	获取价格	Rad hard, -200V, -45A, P-channel MOSFET, R9 in Low-Ohmic TO-254AA package - 300 krad(Si) T
IRHMS9A97160	INFINEON	获取价格	Rad hard, -100V, -45A, P-channel MOSFET, R9 in Low-Ohmic TO-254AA package - 100 krad(Si) T
IRHMS9A97260	INFINEON	获取价格	Rad hard, -200V, -45A, P-channel MOSFET, R9 in Low-Ohmic TO-254AA package - 100 krad(Si) T
IRHN150	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 150V V(BR)DSS \| 25A I(D) \| SMT

与IRHMS9A3064SCS相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

24
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

16
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

48
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

46

产品中心

服务支持

精选活动

关于我们

帮助中心

IRHMS9A3064SCS

IRHMS9A3064SCS 数据手册

与IRHMS9A3064SCS相关器件

与IRHMS9A3064SCS相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IRHMS9A3064SCS

IRHMS9A3064SCS 数据手册

与IRHMS9A3064SCS相关器件

与IRHMS9A3064SCS相关文章

您还可以找

您在本页遇到什么问题？