型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRHMS9A93160 | INFINEON |
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Rad hard, -100V, -45A, P-channel MOSFET, R9 i |
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IRHMS9A93260 | INFINEON |
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Rad hard, -200V, -45A, P-channel MOSFET, R9 in Low-Ohmic TO-254AA package - 300 krad(Si) T |
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IRHMS9A97160 | INFINEON |
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Rad hard, -100V, -45A, P-channel MOSFET, R9 in Low-Ohmic TO-254AA package - 100 krad(Si) T |
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IRHMS9A97260 | INFINEON |
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Rad hard, -200V, -45A, P-channel MOSFET, R9 in Low-Ohmic TO-254AA package - 100 krad(Si) T |
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IRHN150 | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 25A I(D) | SMT |
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IRHN250 | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 18.5A I(D) | SMT |
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IRHN2C50SE | INFINEON |
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TRANSISTOR N-CHANNEL(BVdss=600V, Rds(on)=0.60ohm, Id=10.4A) |
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IRHN2C50SEPBF | INFINEON |
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暂无描述 |
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IRHN3054 | INFINEON |
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RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1) |
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IRHN3054PBF | INFINEON |
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Power Field-Effect Transistor, 35A I(D), 60V, 0.03ohm, 1-Element, N-Channel, Silicon, Meta |
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