Datasheet > IRHMS6S3160

IRHMS6S3160

更新时间： 2024-11-21 06:24:55

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	702K
描述
Power Field-Effect Transistor,

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技术参数
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IRHMS6S3160 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.76
Base Number Matches：	1

IRHMS6S3160 数据手册

PD-97867A

IRHMS6S7160

100V, N-CHANNEL

RADIATION HARDENED

TECHNOLOGY

POWER MOSFET

THRU-HOLE (LOW OHMIC - TO-254AA)

Product Summary

Part Number

Radiation Level RDS(on)

I_D

IRHMS6S7160 100 kRads(Si)

45A*

0.011

IRHMS6S3160

300 kRads(Si)

TO-254AA

Low Ohmic

Description

Features

 Low RDS(on)

 Fast Switching

 Single Event Effect (SEE) Hardened

 Low Total Gate Charge

 Simple Drive Requirements

 Hermetically Sealed

 Ceramic Eyelets

 Electrically Isolated

 Light Weight

 ESD Rating: Class 3A per MIL-STD-750, Method 1020

IRHMS6S7160 is a part of the International Rectifier HiRel

family of products. IR HiRel R6 S-line technology provides

high performance power MOSFETs for space applications.

These devices have been characterized for both Total

Dose and Single Event Effect (SEE) with useful

performance up to LET of 60 (MeV/(mg/cm²). The

combination of low RDS(on) and low gate charge reduces

the power losses in switching applications such as DC-DC

converters and motor controllers. These devices retain all

of the well established advantages of MOSFETs such as

voltage control, fast switching, ease of paralleling and

temperature stability of electrical parameters.

Absolute Maximum Ratings

Pre-Irradiation

Parameter

Symbol

Value

Units

45*

Continuous Drain Current

Pulsed Drain Current 

Maximum Power Dissipation

I_D@ V_GS= 12V, T_C= 25°C

I_D@ V_GS= 12V, T_C= 100°C

45*

180

208

1.67

I_DM@ T_C= 25°C

W/°C

P_D@ T_C= 25°C

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy 

Avalanche Current 

± 20

512

V_GS

E_AS

I_AR

20.8

V/ns

Repetitive Avalanche Energy 

Peak Diode Recovery dv/dt 

Operating Junction and

Storage Temperature Range

Lead Temperature

E_AR

dv/dt

T_J

6.3

-55 to + 150

T_STG

°C

300 (0.063 in. /1.6 mm from case for 10s)

9.3 (Typical)

Weight

* Current is limited by package

For footnotes refer to the page 2.

2018-07-05

International Rectifier HiRel Products, Inc.

12 3 4 5 6 7...9

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与IRHMS6S3160相关器件

型号	品牌	获取价格	描述	数据表
IRHMS6S3260	INFINEON	获取价格	Power Field-Effect Transistor, 45A I(D), 200V, 0.029ohm, 1-Element, N-Channel, Silicon, Me
IRHMS6S7160	INFINEON	获取价格	Power Field-Effect Transistor,
IRHMS6S7160SCS	INFINEON	获取价格	Power Field-Effect Transistor,
IRHMS6S7260	INFINEON	获取价格	Power Field-Effect Transistor, 45A I(D), 200V, 0.029ohm, 1-Element, N-Channel, Silicon, Me
IRHMS6S7260SCS	INFINEON	获取价格	Rad hard, 200V, 45A, single, N-channel MOSFET, R6 in a TO-254AA Low Ohmic package - TO-254
IRHMS6S7264	INFINEON	获取价格	Rad hard, 250V, 45A, single, N-channel MOSFET, R6 in a TO-254AA Low Ohmic package - TO-254
IRHMS6S7264SCS	INFINEON	获取价格	Rad hard, 250V, 45A, single, N-channel MOSFET, R6 in a TO-254AA Low Ohmic package - TO-254
IRHMS9A3064	INFINEON	获取价格	Rad hard, 60V, 45A, single, N-channel MOSFET, R9 in a TO-254AA Low Ohmic package - TO-254A
IRHMS9A3064SCS	INFINEON	获取价格	Rad hard, 60V, 45A, single, N-channel MOSFET, R9 in a TO-254AA Low Ohmic package - TO-254A
IRHMS9A3264	INFINEON	获取价格	Rad hard, 250V, 45A, single, N-channel MOSFET, R9 in a TO-254AA Low Ohmic package - TO-254

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