Datasheet > IRHMS9A93160

IRHMS9A93160

更新时间： 2024-10-31 15:18:35

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
14页	542K
描述
Rad hard, -100V, -45A, P-channel MOSFET, R9 in Low-Ohmic TO-254AA package – Low-Ohmic TO-254AA, 300 krad(Si) TID, COTS

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IRHMS9A93160 数据手册

IRHMS9A97160 (JANSR2N7665T1)

PD-97983A

Radiation Hardened Power MOSFET

Thru-Hole (TO-254AA Low Ohmic)

100V, 45A, P-channel, R9 Superjunction Technology

Product Summary

Features

•

Single event effect (SEE) hardened

•

B_VDSS: -100V

I_D:-45A*

R_{DS (on), max:}19.5m

Q_{G max:}230Nc

(up to LET of 91MeV·cm²/mg)

•

Low R_{DS (on)}

Improved SOA for linear mode operation

Fast switching

REF: MIL-PRF-19500/791

Low total gate charge

Simple drive requirements

Hermetically sealed

Electrically isolated

Ceramic eyelets

Light weight

ESD rating: Class 3B per MIL-STD-750, Method 1020

TO-254AA Low Ohmic

Potential Applications

•

DC-DC converter

Motor drives

Protection circuits

Product Validation

Qualified according to MIL-PRF-19500 for space applications

Description

IR HiRel R9 technology provides superior power MOSFETs for space applications. This family of p-channel

MOSFETs are the first radiation hardened devices that are based on a superjunction technology. These devices

have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with

Linear Energy Transfer (LET) up to 91MeV·cm²/mg. Their combination of low R_{DS (on)}and improved SOA allows for

better performance in applications such as Latching Current Limiters (LCL), Solid-State Power Controllers (SSPC)

or DC-DC converters. These devices retain all of the well-established advantages of MOSFETs such as voltage

control, fast switching and temperature stability of electrical parameters.

Ordering Information

Table 1

Part number

IRHMS9A97160

Ordering options

Package

Screening Level

COTS

TID Level

Low-Ohmic TO-254AA

100 krad (Si)

300 krad (Si)

JANSR2N7665T1

IRHMS9A93160

JANSF2N7665T1

JANS

COTS

JANS

Please read the Important Notice and Warnings at the end of this document

page 1 of 14

www.infineon.com/irhirel

2023-06-13

12 3 4 5 6 7...14

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与IRHMS9A93160相关器件

型号	品牌	获取价格	描述	数据表
IRHMS9A93260	INFINEON	获取价格	Rad hard, -200V, -45A, P-channel MOSFET, R9 in Low-Ohmic TO-254AA package - 300 krad(Si) T
IRHMS9A97160	INFINEON	获取价格	Rad hard, -100V, -45A, P-channel MOSFET, R9 in Low-Ohmic TO-254AA package - 100 krad(Si) T
IRHMS9A97260	INFINEON	获取价格	Rad hard, -200V, -45A, P-channel MOSFET, R9 in Low-Ohmic TO-254AA package - 100 krad(Si) T
IRHN150	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 150V V(BR)DSS \| 25A I(D) \| SMT
IRHN250	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 200V V(BR)DSS \| 18.5A I(D) \| SMT
IRHN2C50SE	INFINEON	获取价格	TRANSISTOR N-CHANNEL(BVdss=600V, Rds(on)=0.60ohm, Id=10.4A)
IRHN2C50SEPBF	INFINEON	获取价格	暂无描述
IRHN3054	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1)
IRHN3054PBF	INFINEON	获取价格	Power Field-Effect Transistor, 35A I(D), 60V, 0.03ohm, 1-Element, N-Channel, Silicon, Meta
IRHN3130	INFINEON	获取价格	Power Field-Effect Transistor, 14A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Meta

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