Datasheet > IRG4RC10STR

IRG4RC10STR

更新时间： 2024-11-24 23:58:55

品牌	Logo	应用领域
其他 - ETC		晶体晶体管双极性晶体管
页数	文件大小	规格书
8页	150K
描述
TRANSISTOR \| IGBT \| N-CHAN \| 600V V(BR)CES \| 8A I(C) \| TO-252AA

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中文翻译

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数据手册

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IRG4RC10STR 数据手册

PD - 91732A

IRG4RC10S

Standard Speed IGBT

INSULATED GATE BIPOLAR TRANSISTOR

Features

• Extremely low voltage drop; 1.0V typical at 2A, 100°C

• Standard: Optimized for minimum saturation

voltage and low operating frequencies ( < 1kHz)

• Generation 4 IGBT design provides tighter

parameter distribution and higher efficiency than

previous generation

V_CES= 600V

V_{CE(on) typ.}= 1.10V

@V_GE= 15V, I_C= 2.0A

• Industry standard TO-252AA package

n-channel

Benefits

• Generation 4 IGBT's offer highest efficiency available

• IGBT's optimized for specified application conditions

D-PAK

TO-252AA

Absolute Maximum Ratings

Parameter

Max.

Units

V_CES

Collector-to-Emitter Breakdown Voltage

Continuous Collector Current

Pulsed Collector Current

600

I_C@ T_C= 25°C

I_C@ T_C= 100°C

8.0

I_CM

I_LM

Clamped Inductive Load Current

Gate-to-Emitter Voltage

V_GE

± 20

E_ARV

Reverse Voltage Avalanche Energy

Maximum Power Dissipation

110

P_D@ T_C= 25°C

P_D@ T_C= 100°C Maximum Power Dissipation

T_J

Operating Junction and

-55 to + 150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

300 (0.063 in. (1.6mm) from case )

Thermal Resistance

Parameter

Typ.

–––

Max.

3.3

Units

°C/W

g (oz)

R_θJC

R_θJA

Junction-to-Case

Junction-to-Ambient (PCB mount)*

Weight

–––

0.3 (0.01)

–––

* When mounted on 1" square PCB (FR-4 or G-10 Material).

For recommended footprint and soldering techniques refer to application note #AN-994

www.irf.com

8/30/99

12 3 4 5 6 7 8

中文翻译

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与IRG4RC10STR相关器件

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IRG4RC10STRL	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 600V V(BR)CES \| 8A I(C) \| TO-252AA
IRG4RC10STRLPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-252AA, LEAD FREE
IRG4RC10STRPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-252AA, LEAD FREE
IRG4RC10STRR	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 600V V(BR)CES \| 8A I(C) \| TO-252AA
IRG4RC10STRRPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-252AA, LEAD FREE
IRG4RC10U	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.15V, @Vge=15V, Ic=5.0A)
IRG4RC10UD	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ
IRG4RC10UDPBF	INFINEON	获取价格	暂无描述
IRG4RC10UDTR	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 8.5A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3
IRG4RC10UDTRL	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 8.5A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3