是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | LEAD FREE, DPAK-3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.04 |
最大集电极电流 (IC): | 22 A | 集电极-发射极最大电压: | 600 V |
配置: | SINGLE | JEDEC-95代码: | TO-252AA |
JESD-30 代码: | R-PSSO-G2 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 2 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | N-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | YES |
端子面层: | Matte Tin (Sn) - with Nickel (Ni) barrier | 端子形式: | GULL WING |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | 30 |
晶体管应用: | POWER CONTROL | 晶体管元件材料: | SILICON |
标称断开时间 (toff): | 706 ns | 标称接通时间 (ton): | 51 ns |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
IRG4RC20FPBF | INFINEON |
完全替代 |
INSULATED GATE BIPOLAR TRANSISTOR | |
IRG4RC20F | INFINEON |
完全替代 |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.82V, @Vge=15V, Ic=12A) |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRG4RC20FTRR | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 22A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3 | |
IRG4ZC50KD | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, N-Channel | |
IRG4ZC70UD | INFINEON |
获取价格 |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE | |
IRG4ZC71KD | INFINEON |
获取价格 |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE | |
IRG4ZH50KD | INFINEON |
获取价格 |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE | |
IRG4ZH70UD | INFINEON |
获取价格 |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE | |
IRG4ZH71KD | INFINEON |
获取价格 |
Surface Mountable Short Circuit Rated UltraFast IGBT (INSULATED GATE BIPOLAR TRANSISTOR WI | |
IRG5K200HF06B | INFINEON |
获取价格 |
MOD IGBT 600V 200A POWIR 62 | |
IRG5W50HF06A | INFINEON |
获取价格 |
MOD IGBT 600V 50A POWIR 34 | |
IRG6B330UDPBF | INFINEON |
获取价格 |
PDP TRENCH IGBT |