Datasheet > IRG7CH35UB

IRG7CH35UB

更新时间： 2024-10-01 21:13:19

品牌	Logo	应用领域
英飞凌 - INFINEON		栅
页数	文件大小	规格书
4页	107K
描述
Insulated Gate Bipolar Transistor, 20A I(C), 1200V V(BR)CES, N-Channel

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IRG7CH35UB 数据手册

PD - 97463

IRG7CH35UB

Features

• Low V_{CE (ON)}Trench IGBT Technology

• Low Switching Losses

• SquareRBSOA

• Positive V_{CE (ON)}Temperature co-efficient

• Tightparameterdistribution

n-channel

Benefits

Applications

• High Efficiency due to Low V_CE(on)and Low Switching

Losses

• RuggedtransientPerformanceforincreasedreliability

• ExcellentCurrentsharinginparalleloperation

• Low EMI

•

Medium Power Drives

UPS

HEV Inverters

Welding

Induction Heating

V_CE

I_Cn

Chip Type

Die Size

Package

IRG7CH35UB

1200V

20A

3.937 X4.862 mm2

Wafer

Mechanical Parameter

Die Size

3.937 x 4.826

mm2

2.423x3.120

0.503 x 0.501

19/10

μm

Minimum Street Width

Emiter Pad Size

Gate Pad Size

mm2

Area Total / Active

Thickness

120

μm

150

Wafer Size

Flat Position

Degrees

Maximum-Possible Chips per Wafer

Passivation Frontside

Front Metal

803pcs

Silicon Nitride

Al, Si (4μm)

AI- Ti - Ni- Ag (1kA°-1kA°-4kA°-6kA°)

Electrically conductive epoxy or solder

0.25 mm diameter minimum

Backside Metal

Die Bond

Reject Ink Dot Size

Store in original container, in dry Nitrogen,

<6 months at an ambient temperature of 23°C

Recommended Storage Environment

www.irf.com

2/26/10

12 3 4

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