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IRG4ZH50KD

更新时间： 2024-11-17 21:54:19
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体二极管双极型晶体管电动机控制瞄准线栅超快软恢复二极管快速软恢复二极管
页数 文件大小 规格书
10页 244K
描述
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

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中文翻译

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IRG4ZH50KD 数据手册

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PD - 9.1680  
IRG4ZH50KD  
Surface Mountable Short  
INSULATED GATE BIPOLAR TRANSISTOR WITH  
ULTRAFAST SOFT RECOVERY DIODE  
Features  
Circuit Rated UltraFast IGBT  
C
n-channel  
● High short circuit rating optimized for motor control, tsc = 10µs,  
VCES = 1200V  
VCC = 720V, TJ = 125°C, VGE = 15V  
● IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft  
recovery antiparallel diodes for use in bridge configurations  
VCE( )typ = 2.79V  
ON  
● Combines low conduction losses with high switching speed  
● Low profile low inductance SMD-10 Package  
● Separated control & Power-connections for easy paralleling  
● Good coplanarity  
G
@VGE = 15V, IC = 29A  
E(k)  
E
● Easy solder inspection and cleaning  
Benefits  
● Highest power density and efficiency available  
● HEXFRED Diodes optimized for performance with IGBTs.  
Minimized recovery characteristics  
● High input impedance requires low gate drive power  
SMD-10  
● Less noise and interference  
Absolute Maximum Ratings  
Parameter  
Max.  
1200  
54  
Units  
V
VCES  
Collector-to-Emitter Voltage  
Continuous Collector Current  
Continuous Collector Current  
Pulsed Collector Current ➀  
Clamped Inductive Load Current ➁  
Diode Continuous Forward Current  
Diode Maximum Forward Current  
Short Circuit Withstand Time  
Gate-to-Emitter Voltage  
IC @ TC = 25°C  
IC @ TC = 100°C  
29  
ICM  
108  
A
ILM  
108  
IF @ TC = 100°C  
16  
IFM  
108  
tsc  
10  
µs  
V
VGE  
± 20  
210  
PD @ TC = 25°C  
Maximum Power Dissipation  
W
PD @ TC = 100°C Maximum Power Dissipation  
83  
TJ  
Operating Junction and  
-55 to +150  
TSTG  
Storage Temperature Range  
°C  
Thermal Resistance  
Parameter  
Min.  
Typ.  
—
Max.  
0.60  
1.20  
—
Units  
°C/W  
g (oz)  
RθJC  
RθJC  
RθCS  
Wt  
Junction-to-Case - IGBT  
Junction-to-Case - Diode  
SMD-10 Case-to-Heatsink (typical), *  
Weight  
—
—
—
—
—
0.44  
6.0(0.21)  
—
* Assumes device soldered to 3.0 oz. Cu on 3.0mm IMS/Aluminum board, mounted to flat, greased heatsink.  
Notes:  
➂ Pulse width  
≤ 80µs; duty factor ≤ 0.1%.  
➀
➁
1
Repetitive rating: VGE = 20V; pulse width limited by maximum  
junction temperature (figure 20)  
➃
Pulse width 5.0µs, single shot.  
VCC = 80% (VCES), VGE = 20V, L = 10µH, RG = 5.0Ω (figure 19)  
www.irf.com  
1234567...10

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