Datasheet > 晶体管 > IGBT> IRG6B330UDPBF

IRG6B330UDPBF

更新时间： 2024-11-05 11:09:59

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管光电二极管双极性晶体管栅局域网
页数	文件大小	规格书
7页	271K
描述
PDP TRENCH IGBT

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRG6B330UDPBF 数据手册

PD - 96304

IRG6B330UDPbF

PDP TRENCH IGBT

Key Parameters

Features

V_CEmin

330

1.69

250

150

Advanced Trench IGBT Technology

Optimized for Sustain and Energy Recovery

Circuits in PDP Applications

V_CE(ON)typ. @ I_C= 70A

I_RPmax @ T_C= 25°C

T_Jmax

Low V_CE(on)and Energy per Pulse (E_PULSE

for Improved Panel Efficiency

)

°C

High Repetitive Peak Current Capability

Lead Free Package

TO-220AB

n-channel

Gate

Collector

Emitter

Description

This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced

trenchIGBTtechnologytoachievelowV_CE(on)andlowE_PULSE^TMratingpersiliconareawhichimprovepanel

efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current

capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP

applications.

Absolute Maximum Ratings

Max.

Parameter

Units

V_GE

±30

Gate-to-Emitter Voltage

I_C@ T_C= 25°C

I_C@ T_C= 100°C

Continuous Collector Current, V_GE@ 15V

Continuous Collector, V_GE@ 15V

Repetitive Peak Current

250

I_RP@ T_C= 25°C

P_D@T_C= 25°C

P_D@T_C= 100°C

160

Power Dissipation

1.3

Linear Derating Factor

W/°C

°C

T_J

-40 to + 150

Operating Junction and

T_STG

Storage Temperature Range

Soldering Temperature for 10 seconds

Mounting Torque, 6-32 or M3 Screw

300

10lb in (1.1N m)

Thermal Resistance

Parameter

Typ.

Max.

Units

R_θJC(IGBT)

R_θJC(Diode)

Thermal Resistance Junction-to-Case-(each IGBT)

Thermal Resistance Junction-to-Case-(each Diode)

Case-to-Sink (flat, greased surface)

Junction-to-Ambient (typical socket mount)

Weight

–––

0.80

1.6

2.4

R_θ

0.24

–––

°C/W

g (oz)

R_θ

–––

6.0 (0.21)

–––

www.irf.com

4/20/10

12 3 4 5 6 7

中文翻译

下载PDF

与IRG6B330UDPBF相关器件

型号	品牌	获取价格	描述	数据表
IRG6I320UPBF	INFINEON	获取价格	PDP TRENCCH IGBT
IRG6I330UPBF	INFINEON	获取价格	PDP TRENCH IGBT
IRG6IC30UPBF	INFINEON	获取价格	PDP TRENCH IGBT
IRG6S320U	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 42A I(C), 330V V(BR)CES, N-Channel, TO-263AB, PLASTIC,
IRG6S320UPBF	INFINEON	获取价格	PDP TRENCH IGBT
IRG6S320UTRL	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 42A I(C), 330V V(BR)CES, N-Channel, TO-263AB, PLASTIC,
IRG6S320UTRLPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 42A I(C), 330V V(BR)CES, N-Channel, TO-263AB, LEAD FREE
IRG6S320UTRR	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 42A I(C), 330V V(BR)CES, N-Channel, TO-263AB, PLASTIC,
IRG6S320UTRRPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 42A I(C), 330V V(BR)CES, N-Channel, TO-263AB, LEAD FREE
IRG6S330UPBF	INFINEON	获取价格	PDP TRENCH IGBT