Datasheet > IRG7PG42UDPBF_15

IRG7PG42UDPBF_15

更新时间： 2024-11-06 01:19:43

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	575K
描述
INSULATED GATE BIPOLAR TRANSISTOR

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中文翻译

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数据手册

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IRG7PG42UDPBF_15 数据手册

IRG7PG42UDPbF

IRG7PG42UD-EPbF

INSULATED GATE BIPOLAR TRANSISTOR

V_CES= 1000V

Features

 Low V_{CE (ON)}trench IGBT technology

 Low switching losses

 Square RBSOA

I_C= 45A, T_C= 100°C

T_J(MAX)= 150°C

 100% of the parts tested for I_LM

 Positive V_{CE (ON)}temperature co-efficient

 Ultra fast soft recovery co-pak diode

 Tight parameter distribution

 Lead-free package

_CE(ON)typ. = 1.7V @ I_C= 30A

n-channel

Benefits

 High efficiency in a wide range of applications

 Suitable for a wide range of switching frequencies

due to low V_CE(on)and low switching losses

 Rugged transient performance for increased reliability

 Excellent current sharing in parallel operation

IRG7PG42UDPbF

TO-247AC

IRG7PG42UD-EPbF

TO-247AD

Applications

 U.P.S.

 Welding

 Solar Inverter

 Induction heating

Gate

Collector

Emitter

Base part number

Package Type

Standard Pack

Form

Orderable Part Number

Quantity

IRG7PG42UDPbF

IRG7PG42UD-EPbF

TO-247AC

TO-247AD

Tube

IRG7PG42UDPbF

IRG7PG42UD-EPbF

Absolute Maximum Ratings

Parameter

Collector-to-Emitter Voltage

Continuous Collector Current (Silicon Limited)

Max.

Units

V_CES

I_C@ T_C= 25°C

1000

85

I_C@ T_C= 100°C Continuous Collector Current (Silicon Limited)

I_CM

I_LM

Pulse Collector Current, V_GE= 15V 

Clamped Inductive Load Current, V_GE= 20V 

Diode Continuous Forward Current

120

I_F@ T_C= 25°C

I_F@ T_C= 100°C Diode Continuous Forward Current

I_FM

Diode Maximum Forward Current 

120

V_GE

Continuous Gate-to-Emitter Voltage

±30

P_D@ T_C= 25°C Maximum Power Dissipation

P_D@ T_C= 100°C Maximum Power Dissipation

320

130

T_J

Operating Junction and

-55 to +150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 sec.

°C

300 (0.063 in.(1.6mm) from case)

10 lbf·in (1.1 N·m)

Mounting Torque, 6-32 or M3 Screw

Thermal Resistance

Parameter

Min.

–––

Typ.

–––

0.24

–––

Max.

0.39

0.56

–––

Units

R_θJC(IGBT) Junction-to-Case (IGBT) 

R_θJC(Diode) Junction-to-Case (Diode) 

°C/W

R_θCS

R_θJA

Case-to-Sink (flat, greased surface)

Junction-to-Ambient (typical socket mount)

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April 29, 2014

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中文翻译

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IRG7PH35UD1-EP	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT S
IRG7PH35UD1MPBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE
IRG7PH35UD1MPBF_15	INFINEON	获取价格	Low Switching Losses
IRG7PH35UD1PBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT S
IRG7PH35UD-EP	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

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