Datasheet > IRG7PH30K10PBF

IRG7PH30K10PBF

更新时间： 2024-10-01 05:39:31

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管栅
页数	文件大小	规格书
9页	322K
描述
INSULATED GATE BIPOLAR TRANSISTOR

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中文翻译

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数据手册

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IRG7PH30K10PBF 数据手册

PD - 96156A

IRG7PH30K10PbF

INSULATED GATE BIPOLAR TRANSISTOR

Features

• Low V_{CE (ON)}Trench IGBT Technology

V_CES= 1200V

• Low Switching Losses

• Maximum Junction Temperature 175 °C

• 10 µS short Circuit SOA

• SquareRBSOA

I_C= 23A, T_C= 100°C

t_SC≥ 10µs, T_J(max)=175°C

• 100% of the parts tested for I_LM

• Positive V_{CE (ON)}Temperature Co-Efficient

• TightParameterDistribution

• LeadFreePackage

V_CE(on)typ. = 2.05V

n-channel

Benefits

• High Efficiency in a Wide Range of Applications

• Suitable for a Wide Range of Switching Frequencies due to

Low V_{CE (ON)}and Low Switching Losses

TO-247AC

• Rugged Transient Performance for Increased Reliability

• Excellent Current Sharing in Parallel Operation

Gate

Collector

Emitter

Absolute Maximum Ratings

Parameter

Max.

Units

V_CES

Collector-to-Emitter Voltage

1200

I_C@ T_C= 25°C

Continuous Collector Current

Nominal Current

I_C@ T_C= 100°C

I_NOMINAL

9.0

I_CM

Pulse Collector Current Vge = 15V

Clamped Inductive Load Current Vge = 20V

Continuous Gate-to-Emitter Voltage

Maximum Power Dissipation

Operating Junction and

I_LM

V_GE

±30

P_D@ T_C= 25°C

210

P_D@ T_C= 100°C

110

T_J

-55 to +175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 sec.

Mounting Torque, 6-32 or M3 Screw

°C

300 (0.063 in. (1.6mm) from case)

10 lbf·in (1.1 N·m)

Thermal Resistance

Parameter

Min.

–––

Typ.

–––

0.24

Max.

0.70

–––

Units

R_θ(IGBT)

Thermal Resistance Junction-to-Case-(each IGBT)

°C/W

R_θ

Thermal Resistance, Case-to-Sink (flat, greased surface)

R_θ

Thermal Resistance, Junction-to-Ambient (typical socket mount)

–––

www.irf.com

06/23/09

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中文翻译

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