IRG7PH42UD1PBF

更新时间： 2024-02-21 19:33:23

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体二极管开关晶体管栅
页数	文件大小	规格书
9页	425K
描述
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS

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IRG7PH42UD1PBF 数据手册

PD - 97480

IRG7PH42UD1PbF

IRG7PH42UD1-EP

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE

FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS

Features

• Low V_{CE (ON)}trench IGBT technology

• Low switching losses

• Square RBSOA

• Ultra-low V_FDiode

• 1300Vpk repetitive transient capacity

V_CES= 1200V

I _NOMINAL= 30A

• 100% of the parts tested for I_LM

T_J(max)= 150°C

V_CE(on)typ. = 1.7V

• Positive V_{CE (ON)}temperature co-efficient

• Tight parameter distribution

• Lead free package

n-channel

Benefits

• Device optimized for induction heating and soft switching

applications

• High Efficiency due to Low V_CE(on), low switching losses

and Ultra-low V_F

• Rugged transient performance for increased reliability

• Excellent current sharing in parallel operation

• Low EMI

TO-247AC

TO-247AD

IRG7PH42UD1PbF

IRG7PH42UD1-EP

Gate

Collector

Emitter

Absolute Maximum Ratings

Parameter

Max.

Units

V_CES

Collector-to-Emitter Voltage

1200

I_C@ T_C= 25°C

Continuous Collector Current

Nominal Current

I_C@ T_C= 100°C

I_NOMINAL

I_CM

Pulse Collector Current, V_GE=15V

Clamped Inductive Load Current, V_GE=20V

Diode Continous Forward Current

Diode Repetitive Peak Forward Current

Continuous Gate-to-Emitter Voltage

Maximum Power Dissipation

I_LM

120

I_F@ T_C= 25°C

I_F@ T_C= 100°C

I_FRM

120

±30

313

125

-55 to +150

V_GE

P_D@ T_C= 25°C

P_D@ T_C= 100°C

T_J

Maximum Power Dissipation

Operating Junction and

°C

T_STG

Storage Temperature Range

Soldering Temperature, for 10 sec.

Mounting Torque, 6-32 or M3 Screw

300 (0.063 in. (1.6mm) from case)

10 lbf·in (1.1 N·m)

Thermal Resistance

Parameter

Min.

–––

Typ.

–––

0.24

Max.

0.4

Units

R_θJC(IGBT)

R_θJC(Diode)

R_θCS

Thermal Resistance Junction-to-Case-(each IGBT)

Thermal Resistance Junction-to-Case-(each Diode)

1.05

–––

°C/W

Thermal Resistance, Case-to-Sink (flat, greased surface)

Thermal Resistance, Junction-to-Ambient (typical socket mount)

R_θJA

–––

www.irf.com

3/26/10

12 3 4 5 6 7...9

中文翻译

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与IRG7PH42UD1PBF相关器件

型号	品牌	获取价格	描述	数据表
IRG7PH42UD2-EPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 60A I(C), 1200V V(BR)CES, N-Channel, TO-247AD, LEAD FRE
IRG7PH42UD2PBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 60A I(C), 1200V V(BR)CES, N-Channel, TO-247AC, LEAD FRE
IRG7PH42UD-EP	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG7PH42UDPBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG7PH42U-EP	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH42UPBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH44K10D-EPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
IRG7PH44K10DPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
IRG7PH44K10DPBF_15	INFINEON	获取价格	Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
IRG7PH46UD-EP	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

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