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IRG7PK35UD1PBF_15

更新时间： 2024-02-10 21:36:00
品牌 Logo 应用领域
英飞凌 - INFINEON 栅
页数 文件大小 规格书
10页 533K
描述
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode

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IRG7PK35UD1PBF_15 数据手册

 浏览型号IRG7PK35UD1PBF_15的Datasheet PDF文件第2页浏览型号IRG7PK35UD1PBF_15的Datasheet PDF文件第3页浏览型号IRG7PK35UD1PBF_15的Datasheet PDF文件第4页浏览型号IRG7PK35UD1PBF_15的Datasheet PDF文件第5页浏览型号IRG7PK35UD1PBF_15的Datasheet PDF文件第6页浏览型号IRG7PK35UD1PBF_15的Datasheet PDF文件第7页 
IRG7PK35UD1PbF  
IRG7PK35UD1-EPbF  
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode  
C
C
VCES = 1400V  
IC = 20A, TC =100°C  
TJ(max) = 150°C  
C
G
E
E
C
C
G
G
VCE(ON) typ. = 2.0V @ IC = 20A  
E
IRG7PK35UD1PbF  
IRG7PK35UD1‐EPbF  
TO‐247AD  
n-channel  
TO‐247AC  
Applications  
 Induction heating  
 Microwave ovens  
 Soft switching applications  
G
Gate  
C
E
Collector  
Emitter  
Features  
Benefits  
High efficiency in a wide range of soft switching  
Low VCE(ON), ultra-low VF, and turn-off soft switching losses  
applications and switching frequencies  
Positive VCE (ON) temperature coefficient and tight distribution  
of parameters  
Excellent current sharing in parallel operation  
Environmentally friendly  
Lead-free, RoHS compliant  
Base part number  
Package Type  
Standard Pack  
Form  
Orderable Part Number  
Quantity  
IRG7PK35UD1PbF  
TO-247AC  
TO-247AD  
Tube  
Tube  
25  
25  
IRG7PK35UD1PbF  
IRG7PK35UD1-EPbF  
IRG7PK35UD1-EPbF  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
VCES  
Collector-to-Emitter Voltage  
Continuous Collector Current  
Continuous Collector Current  
Pulse Collector Current, VGE = 15V   
Clamped Inductive Load Current, VGE = 20V   
Diode Continuous Forward Current  
Diode Continuous Forward Current  
Continuous Gate-to-Emitter Voltage  
Maximum Power Dissipation  
1400  
40  
20  
200  
80  
40  
20  
±30  
167  
V
IC @ TC = 25°C  
IC @ TC = 100°C  
ICM  
A
ILM  
IF @ TC = 25°C  
IF @ TC = 100°C  
VGE  
PD @ TC = 25°C  
PD @ TC = 100°C  
TJ  
V
W
Maximum Power Dissipation  
Operating Junction and  
67  
-40 to +150  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 sec.  
Mounting Torque, 6-32 or M3 Screw  
C
300 (0.063 in. (1.6mm) from case)  
10 lbf·in (1.1 N·m)  
Thermal Resistance  
Parameter  
Min.  
–––  
–––  
–––  
–––  
Typ.  
–––  
–––  
0.24  
40  
Max.  
0.75  
1.4  
–––  
–––  
Units  
Thermal Resistance Junction-to-Case (IGBT)   
Thermal Resistance Junction-to-Case (Diode)   
Thermal Resistance, Case-to-Sink (flat, greased surface)  
Thermal Resistance, Junction-to-Ambient (typical socket mount)  
RJC (IGBT)  
RJC (Diode)  
RCS  
°C/W  
RJA  
1
www.irf.com  
© 2014 International Rectifier  
Submit Datasheet Feedback  
February 27, 2014  
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