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IRG8P08N120KDPBF PDF预览

IRG8P08N120KDPBF

更新时间： 2024-09-14 01:18:11
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英飞凌 - INFINEON 栅
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13页 668K
描述
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode

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IRG8P08N120KDPBF 数据手册

 浏览型号IRG8P08N120KDPBF的Datasheet PDF文件第2页浏览型号IRG8P08N120KDPBF的Datasheet PDF文件第3页浏览型号IRG8P08N120KDPBF的Datasheet PDF文件第4页浏览型号IRG8P08N120KDPBF的Datasheet PDF文件第5页浏览型号IRG8P08N120KDPBF的Datasheet PDF文件第6页浏览型号IRG8P08N120KDPBF的Datasheet PDF文件第7页 
IRG8B08N120KDPbF  
IRG8P08N120KDPbF  
IRG8P08N120KD-EPbF  
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode  
VCES = 1200V  
C
IC = 8A, TC =100°C  
tSC 10µs, TJ(max) = 150°C  
VCE(ON) typ. = 1.7V @ IC = 5A  
E
C
E
G
E
C
G
C
G
G
E
TO-247AD  
IRG8P08N120KD-EPbF  
TO-220AB  
IRG8B08N120KDPbF  
TO-247AC  
IRG8P08N120KDPbF  
Applications  
n-channel  
• Industrial Motor Drive  
• UPS  
• Solar Inverters  
• Welding  
G
Gate  
C
E
Collector  
Emitter  
Features  
Benefits  
Benchmark Low VCE(ON)  
High Efficiency in a Motor Drive Applications  
Increases margin for short circuit protection scheme  
Excellent Current Sharing in Parallel Operation  
Rugged Transient Performance  
10μs Short Circuit SOA  
Positive VCE(ON) Temperature Coefficient  
Square RBSOA and high ILM- rating  
Lead-Free, RoHS compliant  
Environmentally friendly  
Base part number  
Package Type  
Standard Pack  
Form  
Orderable Part Number  
Quantity  
IRG8P08N120KDPbF  
IRG8P08N120KD-EPbF  
IRG8B08N120KDPbF  
TO-247AC  
TO-247AD  
TO-220AB  
Tube  
Tube  
Tube  
25  
25  
50  
IRG8P08N120KDPbF  
IRG8P08N120KD-EPbF  
IRG8B08N120KDPbF  
Absolute Maximum Ratings  
Parameter  
Collector-to-Emitter Voltage  
Max.  
1200  
Units  
V
VCES  
IC @ TC = 25°C  
IC @ TC = 100°C  
15  
8
Continuous Collector Current (Silicon Limited)  
Continuous Collector Current  
ICM  
ILM  
15  
20  
11  
6
±30  
20  
89  
Pulse Collector Current (see fig. 2)  
Clamped Inductive Load Current (see fig. 3)  
Diode Continuous Forward Current  
Diode Continuous Forward Current  
Continuous Gate-to-Emitter Voltage  
Diode Maximum Forward Current   
Maximum Power Dissipation  
Maximum Power Dissipation  
Operating Junction and  
Storage Temperature Range  
A
IF @ TC = 25°C  
IF @ TC = 100°C  
VGE  
V
W
C
IFM  
PD @ TC = 25°C  
PD @ TC = 100°C  
TJ  
TSTG  
36  
-40 to +150  
Soldering Temperature, for 10 sec.  
Mounting Torque, 6-32 or M3 Screw  
300 (0.063 in. (1.6mm) from case)  
10 lbf·in (1.1 N·m)  
Thermal Resistance  
Parameter  
Typ.  
–––  
–––  
–––  
–––  
0.50  
–––  
0.24  
–––  
Max.  
Units  
Thermal Resistance Junction-to-Case-(each IGBT) TO-220AB  
Thermal Resistance Junction-to-Case-(each Diode) TO-220AB  
Thermal Resistance Junction-to-Case-(each IGBT) TO-247  
Thermal Resistance Junction-to-Case-(each Diode) TO-247  
Thermal Resistance, Case-to-Sink (flat, greased surface)TO-220AB  
Thermal Resistance, Junction-to-Ambient (typical socket mount)TO-220AB  
Thermal Resistance, Case-to-Sink (flat, greased surface)TO-247  
Thermal Resistance, Junction-to-Ambient (typical socket mount)TO-247  
1.3  
2.6  
1.4  
2.6  
–––  
62  
RJC (IGBT)  
RJC (Diode)  
RJC (IGBT)  
RJC (Diode)  
RCS  
°C/W  
RJA  
–––  
40  
RCS  
RJA  
1
www.irf.com  
© 2014 International Rectifier  
Submit Datasheet Feedback  
December 12, 2014  
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