Datasheet > IRG8P25N120KDPBF_15

IRG8P25N120KDPBF_15

更新时间： 2024-11-01 01:18:11

品牌	Logo	应用领域
英飞凌 - INFINEON		栅
页数	文件大小	规格书
11页	639K
描述
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRG8P25N120KDPBF_15 数据手册

浏览型号IRG8P25N120KDPBF_15的Datasheet PDF文件第2页

浏览型号IRG8P25N120KDPBF_15的Datasheet PDF文件第3页

浏览型号IRG8P25N120KDPBF_15的Datasheet PDF文件第4页

浏览型号IRG8P25N120KDPBF_15的Datasheet PDF文件第5页

浏览型号IRG8P25N120KDPBF_15的Datasheet PDF文件第6页

IRG8P25N120KDPbF

IRG8P25N120KD-EPbF

Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode

V_CES= 1200V

I_C= 25A, T_C=100°C

t_SC10µs, T_J(max)= 150°C

_CE(ON)typ. = 1.7V @ IC = 15A

IRG8P25N120KDPbF

IRG8P25N120KD‐EPbF

TO‐247AD

n-channel

TO‐247AC

Applications

Gate

• Industrial Motor Drive

• UPS

Collector

Emitter

• Solar Inverters

• Welding

Features

Benefits

Benchmark Low V_CE(ON)

High Efficiency in a Motor Drive Applications

Increases margin for short circuit protection scheme

Excellent Current Sharing in Parallel Operation

Rugged Transient Performance

10μs Short Circuit SOA

Positive V_CE(ON)Temperature Coefficient

Square RBSOA and high I_LM-rating

Lead-Free, RoHS compliant

Environmentally friendly

Base part number

Package Type

Standard Pack

Form

Orderable Part Number

Quantity

IRG8P25N120KDPbF

TO-247AC

TO-247AD

Tube

IRG8P25N120KDPbF

IRG8P25N120KD-EPbF

Absolute Maximum Ratings

Parameter

Collector-to-Emitter Voltage

Max.

Units

V_CES

1200

I_C@ T_C= 25°C

I_C@ T_C= 100°C

Continuous Collector Current (Silicon Limited)

Continuous Collector Current

I_CM

I_LM

Pulse Collector Current (see fig. 2)

Clamped Inductive Load Current (see fig. 3)

Diode Continuous Forward Current

Diode Maximum Forward Current 

Continuous Gate-to-Emitter Voltage

Maximum Power Dissipation

I_F@ T_C= 25°C

I_F@ T_C= 100°C

I_FM

V_GE

±30

180

P_D@ T_C= 25°C

P_D@ T_C= 100°C

Maximum Power Dissipation

T_J

Operating Junction and

-40 to +150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 sec.

Mounting Torque, 6-32 or M3 Screw

300 (0.063 in. (1.6mm) from case)

10 lbf·in (1.1 N·m)

Thermal Resistance

Parameter

Min.

–––

Typ.

–––

0.24

Max.

0.7

1.5

–––

Units

Thermal Resistance Junction-to-Case-(each IGBT) 

Thermal Resistance Junction-to-Case-(each Diode) 

Thermal Resistance, Case-to-Sink (flat, greased surface)

Thermal Resistance, Junction-to-Ambient (typical socket mount)

R_JC(IGBT)

R_JC(Diode)

R_CS

°C/W

R_JA

Submit Datasheet Feedback

November 3, 2014

12 3 4 5 6 7...11

中文翻译

下载PDF

与IRG8P25N120KDPBF_15相关器件

型号	品牌	获取价格	描述	数据表
IRG8P40N120KDPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
IRG8P40N120KDPBF_15	INFINEON	获取价格	Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
IRG8P50N120KDPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
IRG8P50N120KDPBF_15	INFINEON	获取价格	Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
IRG8P60N120KDPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
IRG8P60N120KDPBF_15	INFINEON	获取价格	Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
IRGAC30F	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 600V V(BR)CES \| 23A I(C) \| TO-204AE
IRGAC30U	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 600V V(BR)CES \| 17A I(C) \| TO-204AE
IRGAC40F	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 600V V(BR)CES \| 38A I(C) \| TO-204AE
IRGAC40U	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 600V V(BR)CES \| 31A I(C) \| TO-204AE

与IRG8P25N120KDPBF_15相关文章

三星深化印度制造布局，供应链本地化进程加速
2024-10-29

20
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

21
纳微科技震撼发布GaNSlim革新氮化镓功率芯片
2024-10-18

45
意法半导体发布第四代SiC技术，助力电动汽车电驱
2024-10-15

53

产品中心

服务支持

精选活动

关于我们

帮助中心

IRG8P25N120KDPBF_15

IRG8P25N120KDPBF_15 数据手册

与IRG8P25N120KDPBF_15相关器件

与IRG8P25N120KDPBF_15相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IRG8P25N120KDPBF_15

IRG8P25N120KDPBF_15 数据手册

与IRG8P25N120KDPBF_15相关器件

与IRG8P25N120KDPBF_15相关文章

您还可以找

您在本页遇到什么问题？