Datasheet > IRG7T100HF12B

IRG7T100HF12B

更新时间： 2024-10-31 19:29:15

品牌	Logo	应用领域
英飞凌 - INFINEON		栅
页数	文件大小	规格书
6页	848K
描述
Insulated Gate Bipolar Transistor

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技术参数
数据手册

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IRG7T100HF12B 技术参数

生命周期：	Obsolete	Reach Compliance Code：	compliant
风险等级：	5.68	Base Number Matches：	1

IRG7T100HF12B 数据手册

IRG5K50P5K50PM06E

IRG7T100HF12B

IGBT Half-Bridge

V_CES= 1200V

I_C= 100A at T_C= 80°C

t_SC≥ 10µsec

POWIR 62^™Package

V_CE(ON)= 1.90V at I_C= 100A

Applications：



Industrial Motor Drive

Uninterruptible Power Supply

Welding and Cutting Machine

Switched Mode Power Supply

Induction Heating

Features

Benefits

Low V_CE(ON)and Switching Losses

RBSOA Tested

High Efficiency in a Wide Range of Applications

Rugged Transient Performance

10µsec Short Circuit Safe Operating Area

POWIR 62^™Package

Lead Free

Industry Standard

RoHS Compliant, Environmental Friendly

Base Part Number

Package Type

Standard Pack Quantity Orderable Part Number

IRG7T100HF12B

POWIR 62^™

Box

IRG7T100HF12B

Absolute Maximum Ratings of IGBT

V_CES

V_GES

Collector to Emitter Voltage

1200

±20

Continuous Gate to Emitter Voltage

T_C= 80°C

100

I_C

Continuous Collector Current

T_C= 25°C

T_J= 175°C

200

I_CM

P_D

Pulse Collector Current

200

Maximum Power Dissipation (IGBT)

Maximum IGBT Junction Temperature

Maximum Operating Junction Temperature Range

Storage Temperature

T_C= 25°C, T_J= 175°C

680

°C

T_J

175

T_JOP

T_stg

-40 to +150

-40 to +125

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