Datasheet > IRG7SC28UTRLPBF

IRG7SC28UTRLPBF

更新时间： 2024-11-01 19:49:03

品牌	Logo	应用领域
英飞凌 - INFINEON		栅功率控制晶体管
页数	文件大小	规格书
8页	200K
描述
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3

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IRG7SC28UTRLPBF 数据手册

PD - 97569A

PDP TRENCH IGBT

IRG7SC28UPbF

Key Parameters

Features

V_CEmin

600

1.70

225

150

Advanced Trench IGBT Technology

V_CE(ON)typ. @ I_C= 40A

I_RPmax @ T_C= 25°C

T_Jmax

Optimized for Sustain and Energy Recovery

circuits in PDP applications

Low V_CE(on)and Energy per Pulse (E_PULSE

for improved panel efficiency

)

°C

High repetitive peak current capability

Lead Free package

D²Pak

IRG7SC28UPbF

n-channel

Gate

Collector

Emitter

Description

This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced

trenchIGBTtechnologytoachievelowV_CE(on)andlowE_PULSE^TMratingpersiliconareawhichimprovepanel

efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current

capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP

applications.

Absolute Maximum Ratings

Max.

Parameter

Units

V_GE

±30

Gate-to-Emitter Voltage

I_C@ T_C= 25°C

I_C@ T_C= 100°C

Continuous Collector Current, V_GE@ 15V

Continuous Collector, V_GE@ 15V

Repetitive Peak Current

I_RP@ T_C= 25°C

225

P_D@T_C= 25°C

P_D@T_C= 100°C

171

Power Dissipation

1.37

Linear Derating Factor

W/°C

°C

T_J

-40 to + 150

Operating Junction and

T_STG

Storage Temperature Range

Soldering Temperature for 10 seconds

Mounting Torque, 6-32 or M3 Screw

300

10lb in (1.1N m)

Thermal Resistance

Parameter

Junction-to-Case

Junction-to-Ambient (PCB Mount)

Typ.

–––

Max.

0.73

Units

°C/W

R_θJC

R_θJA

–––

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07/11/11

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