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IRG7SC28UTRLPBF PDF预览

IRG7SC28UTRLPBF

更新时间: 2024-10-31 19:49:03
品牌 Logo 应用领域
英飞凌 - INFINEON 功率控制晶体管
页数 文件大小 规格书
8页 200K
描述
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3

IRG7SC28UTRLPBF 数据手册

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PD - 97569A  
PDP TRENCH IGBT  
IRG7SC28UPbF  
Key Parameters  
Features  
VCE min  
600  
1.70  
225  
150  
V
V
A
l
Advanced Trench IGBT Technology  
VCE(ON) typ. @ IC = 40A  
IRP max @ TC= 25°C  
TJ max  
l
Optimized for Sustain and Energy Recovery  
circuits in PDP applications  
TM  
l
Low VCE(on) and Energy per Pulse (EPULSE  
for improved panel efficiency  
)
°C  
l
l
High repetitive peak current capability  
Lead Free package  
C
C
E
C
G
G
D2Pak  
IRG7SC28UPbF  
E
n-channel  
G
C
E
Gate  
Collector  
Emitter  
Description  
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced  
trenchIGBTtechnologytoachievelowVCE(on)andlowEPULSETM ratingpersiliconareawhichimprovepanel  
efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current  
capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP  
applications.  
Absolute Maximum Ratings  
Max.  
Parameter  
Units  
VGE  
±30  
Gate-to-Emitter Voltage  
V
IC @ TC = 25°C  
IC @ TC = 100°C  
Continuous Collector Current, VGE @ 15V  
Continuous Collector, VGE @ 15V  
Repetitive Peak Current  
60  
30  
A
IRP @ TC = 25°C  
225  
PD @TC = 25°C  
PD @TC = 100°C  
171  
Power Dissipation  
W
68  
Power Dissipation  
1.37  
Linear Derating Factor  
W/°C  
°C  
TJ  
-40 to + 150  
Operating Junction and  
TSTG  
Storage Temperature Range  
Soldering Temperature for 10 seconds  
Mounting Torque, 6-32 or M3 Screw  
300  
10lb in (1.1N m)  
N
Thermal Resistance  
Parameter  
Junction-to-Case  
Junction-to-Ambient (PCB Mount)  
Typ.  
–––  
Max.  
0.73  
40  
Units  
°C/W  
RθJC  
RθJA  
–––  
www.irf.com  
1
07/11/11  

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