是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.76 | 峰值回流温度(摄氏度): | NOT SPECIFIED |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRG7T100HF12B | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor | |
IRG7T150CL12B | INFINEON |
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Insulated Gate Bipolar Transistor | |
IRG7T200CH12B | INFINEON |
获取价格 |
MOD IGBT 1200V 200A POWIR 62 | |
IRG7T200CL12B | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor | |
IRG8P08N120KDPBF | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode | |
IRG8P08N120KDPBF_15 | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode | |
IRG8P15N120KDPBF | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode | |
IRG8P15N120KDPBF_15 | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode | |
IRG8P25N120KDPBF | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode | |
IRG8P25N120KDPBF_15 | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode |