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IRG7T200CL12B PDF预览

IRG7T200CL12B

更新时间: 2024-09-13 21:14:19
品牌 Logo 应用领域
英飞凌 - INFINEON
页数 文件大小 规格书
8页 792K
描述
Insulated Gate Bipolar Transistor

IRG7T200CL12B 技术参数

生命周期:ObsoleteReach Compliance Code:compliant
风险等级:5.73Base Number Matches:1

IRG7T200CL12B 数据手册

 浏览型号IRG7T200CL12B的Datasheet PDF文件第2页浏览型号IRG7T200CL12B的Datasheet PDF文件第3页浏览型号IRG7T200CL12B的Datasheet PDF文件第4页浏览型号IRG7T200CL12B的Datasheet PDF文件第5页浏览型号IRG7T200CL12B的Datasheet PDF文件第6页浏览型号IRG7T200CL12B的Datasheet PDF文件第7页 
IRG5K50P5K50PM06E  
IRG7T200CL12B  
Low-Side Chopper IGBT with High-Side Diode  
VCES = 1200V  
IC = 200A at TC = 80°C  
tSC ≥ 10µsec  
POWIR 62Package  
VCE(ON) = 1.90V at IC = 200A  
Applications  
Industrial Motor Drive  
Uninterruptible Power Supply  
Welding and Cutting Machine  
Switched Mode Power Supply  
Features  
Benefits  
Low VCE(ON) and Switching Losses  
RBSOA Tested  
High Efficiency in a Wide Range of Applications  
Rugged Transient Performance  
10µsec Short Circuit Safe Operating Area  
POWIR 62Package  
Lead Free  
Industry Standard  
RoHS Compliant, Environmental Friendly  
Base Part Number  
Package Type  
Standard Pack  
Quantity  
Orderable Part Number  
IRG7T200CL12B  
POWIR 62™  
Box  
45  
IRG7T200CL12B  
Absolute Maximum Ratings of IGBT  
VCES  
VGES  
Collector to Emitter Voltage  
1200  
±20  
V
V
Continuous Gate to Emitter Voltage  
TC = 80°C  
TC = 25°C  
TJ = 175°C  
200  
A
IC  
Continuous Collector Current  
390  
A
ICM  
PD  
Pulse Collector Current  
400  
A
Maximum Power Dissipation (IGBT)  
Maximum IGBT Junction Temperature  
Maximum Operating Junction Temperature Range  
Storage Temperature  
TC = 25°C, TJ = 175°C  
1060  
W
°C  
°C  
°C  
TJ  
175  
TJOP  
Tstg  
-40 to +150  
-40 to +125  
1
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