是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | , | Reach Compliance Code: | compliant |
风险等级: | 5.26 | 最大集电极电流 (IC): | 40 A |
集电极-发射极最大电压: | 330 V | 门极发射器阈值电压最大值: | 4.7 V |
门极-发射极最大电压: | 30 V | 最高工作温度: | 150 °C |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 78 W |
子类别: | Insulated Gate BIP Transistors | 表面贴装: | YES |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRG7RA13UPBF | INFINEON |
获取价格 |
Advanced Trench IGBT Technology | |
IRG7RA13UTRLPBF | INFINEON |
获取价格 |
Advanced Trench IGBT Technology | |
IRG7RA13UTRPBF | INFINEON |
获取价格 |
Advanced Trench IGBT Technology | |
IRG7RA13UTRRPBF | INFINEON |
获取价格 |
Advanced Trench IGBT Technology | |
IRG7S313U | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 40A I(C), 330V V(BR)CES, N-Channel, TO-263AB, PLASTIC, | |
IRG7S313UPBF | INFINEON |
获取价格 |
PDP TRENCH IGBT | |
IRG7S313UTRL | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 40A I(C), 330V V(BR)CES, N-Channel, TO-263AB, PLASTIC, | |
IRG7S313UTRLPBF | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 40A I(C), 330V V(BR)CES, N-Channel, TO-263AB, LEAD FREE | |
IRG7S313UTRR | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 40A I(C), 330V V(BR)CES, N-Channel, TO-263AB, PLASTIC, | |
IRG7S313UTRRPBF | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 40A I(C), 330V V(BR)CES, N-Channel, TO-263AB, LEAD FREE |