Datasheet > IRG7SC12FPBF

IRG7SC12FPBF

更新时间： 2024-11-01 08:49:51

品牌	Logo	应用领域
英飞凌 - INFINEON		栅
页数	文件大小	规格书
10页	242K
描述
Insulated Gate Bipolar Transistor,

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中文翻译

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技术参数
数据手册

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IRG7SC12FPBF 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	8.52	峰值回流温度（摄氏度）：	NOT SPECIFIED
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

IRG7SC12FPBF 数据手册

PD - 96363

IRG7SC12FPbF

INSULATED GATE BIPOLAR TRANSISTOR

Features

V_CES= 600V

• Low V_{CE (ON)}Trench IGBT Technology

• Maximum Junction temperature 150 °C

• 3 μS short circuit SOA

I_C= 8A, T_C= 100°C

• SquareRBSOA

t_SC≥ 3μs, T_J(max)= 150°C

• Positive V_{CE (ON)}Temperature co-efficient

• Tightparameterdistribution

• LeadFreePackage

V_CE(on)typ. = 1.60V

n-channel

Benefits

• High Efficiency in a HVAC, Refrigerator applications

• RuggedtransientPerformanceforincreasedreliability

• ExcellentCurrentsharinginparalleloperation

• Low EMI

D²Pak

IRG7SC12FPbF

Gate

Collector

Emitter

Absolute Maximum Ratings

Parameter

Max.

Units

V_CES

Collector-to-Emitter Voltage

Continuous Collector Current

Nominal Current

600

I_C@ T_C= 25°C

I_C@ T_C= 100°C

I_NOMINAL

I_CM

Pulse Collector Current

Clamped Inductive Load Current

Gate-to-Emitter Voltage

I_LM

± 30

V_GE

P_D@ T_C= 25°C

Maximum Power Dissipation

Operating Junction and

P_D@ T_C= 100°C

T_J

-55 to +150

°C

T_STG

Storage Temperature Range

Soldering Temperature, for 10 sec.

300 (0.063 in. (1.6mm) from case)

Thermal Resistance

Parameter

Thermal Resistance Junction-to-Case

Thermal Resistance, Case-to-Sink (flat, greased surface)

Thermal Resistance, Junction-to-Ambient (typical socket mount)

Min.

–––

Typ.

–––

0.50

Max.

1.8

Units

R_θJC

R_θCS

R_θJA

°C/W

–––

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03/25/11

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