Datasheet > IRG7RA13UTRLPBF

IRG7RA13UTRLPBF

更新时间： 2024-01-09 01:38:54

品牌	Logo	应用领域
英飞凌 - INFINEON		双极性晶体管
页数	文件大小	规格书
8页	259K
描述
Advanced Trench IGBT Technology

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数据手册

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IRG7RA13UTRLPBF 数据手册

PDP TRENCH IGBT

IRG7RA13UPbF

Key Parameters

Features

 Advanced Trench IGBT Technology

 Optimized for Sustain and Energy Recovery

V_CEmin

_CE(ON)typ. @ I_C= 20A

_RPmax @ T_C= 25°C

360

1.42

276

150

circuits in PDP applications

 Low V_CE(on)and Energy per Pulse (E_PULSE

for improved panel efficiency

)

T_Jmax

°C

 High repetitive peak current capability

 Lead Free package

Description

This IGBT is specifically designed for applications in

Plasma Display Panels. This device utilizes advanced

trench IGBT technology to achieve low V_CE(on)and low

E_PULSE

rating per silicon area which improve panel

efficiency. Additional features are 150°C operating junction

temperature and high repetitive peak current capability.

These features combine to make this IGBT a highly

efficient, robust and reliable device for PDP applications.

n-channel

D-Pak

Gate

Collector

Emitter

Ordering Information

Base part number

Package Type

Standard Pack

Form

Tube

Complete Part Number

Quantity

2000

3000

IRG7RA13UPbF

D-Pak

IRG7RA13UPbF

IRG7RA13UTRPbF

IRG7RA13UTRLPbF

IRG7RA13UTRRPbF

Tape and Reel

Tape and Reel Left

Tape and Reel Right

Absolute Maximum Ratings

Parameter

Gate-to-Emitter Voltage

Max.

Units

V_GE

±30

I_C@ T_C= 25°C

I_C@ T_C= 100°C

I_RP@ T_C= 25°C

P_D@T_C= 25°C

P_D@T_C= 100°C

Continuous Collector Current, V_GE@ 15V

Continuous Collector, V_GE@ 15V

Repetitive Peak Current 

Power Dissipation

276

Power Dissipation

Linear Derating Factor

0.63

W/°C

T_J

Operating Junction and

-40 to + 150

T_STG

Storage Temperature Range

Soldering Temperature for 10 seconds

°C

300

Thermal Resistance

Parameter

Junction-to-Case 

Typ.

–––

—

Max.

1.6

Units

R_JC

R_JA

°C/W

Junction-to-Ambient (PCB Mount) 

www.irf.com

November 5^th, 2012

12 3 4 5 6 7 8

中文翻译

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