Datasheet > 晶体管 > IGBT> IRG7PSH50UDPBF

IRG7PSH50UDPBF

更新时间： 2024-02-07 02:03:37

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体二极管双极型晶体管双极性晶体管栅超快软恢复二极管快速软恢复二极管
页数	文件大小	规格书
10页	389K
描述
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

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中文翻译

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数据手册

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IRG7PSH50UDPBF 数据手册

PD - 97548

IRG7PSH50UDPbF

INSULATED GATE BIPOLAR TRANSISTOR WITH

ULTRAFAST SOFT RECOVERY DIODE

Features

• Low V_{CE (ON)}trench IGBT technology

• Low switching losses

• SquareRBSOA

V_CES= 1200V

I _NOMINAL= 50A

• 100% of the parts tested for I_LM

• Positive V_{CE (ON)}temperature co-efficient

• Ultra fast soft recovery co-pak diode

• Tightparameterdistribution

• Lead-Free

T_J(max)= 150°C

V_CE(on)typ. = 1.7V

n-channel

Benefits

• High efficiency in a wide range of applications

• Suitable for a wide range of switching frequencies due to

low V_{CE (ON)}and low switching losses

• Ruggedtransientperformanceforincreasedreliability

• Excellent current sharing in parallel operation

Applications

• U.P.S.

Super-247

• Welding

• SolarInverter

• InductionHeating

Gate

Collector

Emitter

Absolute Maximum Ratings

Parameter

Max.

1200

116

Units

Collector-to-Emitter Voltage

V_CES

Continuous Collector Current (Silicon Limited)

Nominal Current

I_C@ T_C= 25°C

I_C@ T_C= 100°C

I_NOMINAL

Pulse Collector Current, V_GE= 15V

Clamped Inductive Load Current, V_GE= 20V

I_CM

150

I_LM

200

Diode Continous Forward Current

Diode Maximum Forward Current

Continuous Gate-to-Emitter Voltage

Maximum Power Dissipation

116

I_F@ T_C= 25°C

I_F@ T_C= 100°C

200

I_FM

±30

V_GE

462

P_D@ T_C= 25°C

Maximum Power Dissipation

185

P_D@ T_C= 100°C

Operating Junction and

-55 to +150

T_J

Storage Temperature Range

°C

T_STG

Soldering Temperature, for 10 sec.

Mounting Torque, 6-32 or M3 Screw

300 (0.063 in. (1.6mm) from case)

10 lbf·in (1.1 N·m)

Thermal Resistance

Parameter

Min.

–––

Typ.

–––

0.24

Max.

0.27

0.37

–––

Units

Thermal Resistance Junction-to-Case-(each IGBT)

R_θ(IGBT)

Thermal Resistance Junction-to-Case-(each Diode)

R_θ(Diode)

°C/W

R_θ

Thermal Resistance, Case-to-Sink (flat, greased surface)

R_θ

Thermal Resistance, Junction-to-Ambient (typical socket mount)

–––

www.irf.com

07/28/2010

12 3 4 5 6 7...10

中文翻译

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与IRG7PSH50UDPBF相关器件

型号	品牌	获取价格	描述	数据表
IRG7PSH54K10DPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
IRG7PSH73K10PBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR
IRG7R313UPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 40A I(C), 330V V(BR)CES, N-Channel, TO-252AA, LEAD FREE
IRG7R313UTRLPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 40A I(C), 330V V(BR)CES, N-Channel
IRG7R313UTRPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 40A I(C), 330V V(BR)CES, N-Channel
IRG7R313UTRRPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 40A I(C), 330V V(BR)CES, N-Channel,
IRG7RA13UPBF	INFINEON	获取价格	Advanced Trench IGBT Technology
IRG7RA13UTRLPBF	INFINEON	获取价格	Advanced Trench IGBT Technology
IRG7RA13UTRPBF	INFINEON	获取价格	Advanced Trench IGBT Technology
IRG7RA13UTRRPBF	INFINEON	获取价格	Advanced Trench IGBT Technology

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