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IRG7PSH54K10DPBF PDF预览

IRG7PSH54K10DPBF

更新时间: 2024-01-06 02:38:24
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体二极管双极型晶体管超快软恢复二极管
页数 文件大小 规格书
11页 752K
描述
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode

IRG7PSH54K10DPBF 数据手册

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IRG7PSH54K10DPbF  
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode  
C
VCES = 1200V  
IC = 65A, TC =100°C  
tSC 10µs, TJ(max) = 150°C  
E
G
C
V
CE(ON) typ. = 1.9V @ IC = 50A  
G
E
n-channel  
IRG7PSH54K10DPbF  
Applications  
• Industrial Motor Drive  
• UPS  
• Solar Inverters  
• Welding  
G
C
E
Gate  
Collector  
Emitter  
Features  
Benefits  
Low VCE(ON) and switching losses  
10µs Short Circuit SOA  
Square RBSOA  
High efficiency in a Wide Range of Applications  
Rugged Transient Performance  
Maximum Junction Temperature 150°C  
Positive VCE (ON) Temperature Coefficient  
Increased Reliability  
Excellent Current Sharing in Parallel Operation  
Base part number  
Package Type  
Super-247  
Standard Pack  
Form  
Tube  
Orderable Part Number  
Quantity  
IRG7PSH54K10DPbF  
25  
IRG7PSH54K10DPbF  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
VCES  
Collector-to-Emitter Voltage  
Continuous Collector Current  
Continuous Collector Current  
Pulse Collector Current, VGE=20V  
1200  
120  
65  
V
IC @ TC = 25°C  
IC @ TC = 100°C  
ICM  
A
200  
ILM  
Clamped Inductive Load Current, VGE=20V  
Diode Continuous Forward Current  
Diode Continuous Forward Current  
Continuous Gate-to-Emitter Voltage  
Maximum Power Dissipation  
200  
50  
25  
±30  
520  
210  
IF @ TC = 25°C  
IF @ TC = 100°C  
VGE  
PD @ TC = 25°C  
PD @ TC = 100°C  
TJ  
V
W
Maximum Power Dissipation  
Operating Junction and  
-40 to +150  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 sec.  
Mounting Torque, 6-32 or M3 Screw  
C
300 (0.063 in. (1.6mm) from case)  
10 lbf·in (1.1 N·m)  
Thermal Resistance  
Parameter  
Min.  
–––  
–––  
–––  
–––  
Typ.  
–––  
–––  
0.24  
–––  
Max.  
0.24  
0.70  
–––  
40  
Units  
Thermal Resistance Junction-to-Case-(each IGBT)   
Thermal Resistance Junction-to-Case-(each Diode)   
Thermal Resistance, Case-to-Sink (flat, greased surface)  
Thermal Resistance, Junction-to-Ambient (typical socket mount)  
RJC (IGBT)  
RJC (Diode)  
RCS  
°C/W  
RJA  
1
www.irf.com  
© 2013 International Rectifier  
April 16, 2013  

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