Datasheet > IRG7R313UTRPBF

IRG7R313UTRPBF

更新时间： 2023-02-26 13:05:17

品牌	Logo	应用领域
英飞凌 - INFINEON		栅
页数	文件大小	规格书
8页	236K
描述
Insulated Gate Bipolar Transistor, 40A I(C), 330V V(BR)CES, N-Channel

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IRG7R313UTRPBF 数据手册

PD - 97484

IRG7R313UPbF

PDP TRENCH IGBT

Key Parameters

Features

V_CEmin

330

1.35

160

150

Advanced Trench IGBT Technology

Optimized for Sustain and Energy Recovery

circuits in PDP applications

V_CE(ON)typ. @ I_C= 20A

I_RPmax @ T_C= 25°C

T_Jmax

Low V_CE(on)and Energy per Pulse (E_PULSE

for improved panel efficiency

)

°C

High repetitive peak current capability

Lead Free package

D-Pak

IRG7R313UPbF

n-channel

Gate

Collector

Emitter

Description

This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced

trenchIGBTtechnologytoachievelowV_CE(on)andlowE_PULSE^TMratingpersiliconareawhichimprovepanel

efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current

capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP

applications.

Absolute Maximum Ratings

Max.

Parameter

Units

V_GE

±30

Gate-to-Emitter Voltage

I_C@ T_C= 25°C

I_C@ T_C= 100°C

I_RP@ T_C= 25°C

P_D@T_C= 25°C

P_D@T_C= 100°C

Continuous Collector Current, V_GE@ 15V

Continuous Collector, V_GE@ 15V

Repetitive Peak Current

160

Power Dissipation

0.63

Linear Derating Factor

W/°C

°C

T_J

-40 to + 150

Operating Junction and

T_STG

Storage Temperature Range

Soldering Temperature for 10 seconds

300

Thermal Resistance

Parameter

Typ.

Max.

Units

R_θJC

Junction-to-Case

–––

1.6

°C/W

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