是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | LEAD FREE, PLASTIC PACKAGE-3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.62 |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 140 A |
集电极-发射极最大电压: | 1200 V | 配置: | SINGLE |
最大降落时间(tf): | 65 ns | 门极发射器阈值电压最大值: | 6 V |
门极-发射极最大电压: | 30 V | JEDEC-95代码: | TO-247AC |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 175 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 556 W |
认证状态: | Not Qualified | 最大上升时间(tr): | 60 ns |
子类别: | Insulated Gate BIP Transistors | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | POWER CONTROL |
晶体管元件材料: | SILICON | 标称断开时间 (toff): | 710 ns |
标称接通时间 (ton): | 75 ns | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRG7PK35UD1PBF | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode | |
IRG7PK35UD1PBF_15 | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode | |
IRG7PSH50UDPBF | INFINEON |
获取价格 |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE | |
IRG7PSH54K10DPBF | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode | |
IRG7PSH73K10PBF | INFINEON |
获取价格 |
INSULATED GATE BIPOLAR TRANSISTOR | |
IRG7R313UPBF | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 40A I(C), 330V V(BR)CES, N-Channel, TO-252AA, LEAD FREE | |
IRG7R313UTRLPBF | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 40A I(C), 330V V(BR)CES, N-Channel | |
IRG7R313UTRPBF | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 40A I(C), 330V V(BR)CES, N-Channel | |
IRG7R313UTRRPBF | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 40A I(C), 330V V(BR)CES, N-Channel, | |
IRG7RA13UPBF | INFINEON |
获取价格 |
Advanced Trench IGBT Technology |