是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | LEAD FREE, PLASTIC PACKAGE-3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 8.33 |
Is Samacsys: | N | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 85 A | 集电极-发射极最大电压: | 1200 V |
配置: | SINGLE WITH BUILT-IN DIODE | 最大降落时间(tf): | 86 ns |
门极发射器阈值电压最大值: | 6 V | 门极-发射极最大电压: | 30 V |
JEDEC-95代码: | TO-247AD | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 320 W | 认证状态: | Not Qualified |
最大上升时间(tr): | 41 ns | 子类别: | Insulated Gate BIP Transistors |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | POWER CONTROL | 晶体管元件材料: | SILICON |
标称断开时间 (toff): | 444 ns | 标称接通时间 (ton): | 51 ns |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRG7PH42UDPBF | INFINEON |
获取价格 |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE | |
IRG7PH42U-EP | INFINEON |
获取价格 |
INSULATED GATE BIPOLAR TRANSISTOR | |
IRG7PH42UPBF | INFINEON |
获取价格 |
INSULATED GATE BIPOLAR TRANSISTOR | |
IRG7PH44K10D-EPBF | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode | |
IRG7PH44K10DPBF | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode | |
IRG7PH44K10DPBF_15 | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode | |
IRG7PH46UD-EP | INFINEON |
获取价格 |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE | |
IRG7PH46UDPBF | INFINEON |
获取价格 |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE | |
IRG7PH46U-EP | INFINEON |
获取价格 |
INSULATED GATE BIPOLAR TRANSISTOR | |
IRG7PH46UPBF | INFINEON |
获取价格 |
INSULATED GATE BIPOLAR TRANSISTOR |