是否Rohs认证: | 符合 | 生命周期: | Obsolete |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.55 | 最大集电极电流 (IC): | 90 A |
集电极-发射极最大电压: | 1200 V | 最大降落时间(tf): | 86 ns |
门极发射器阈值电压最大值: | 6 V | 门极-发射极最大电压: | 30 V |
最高工作温度: | 175 °C | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 385 W |
最大上升时间(tr): | 41 ns | 子类别: | Insulated Gate BIP Transistors |
表面贴装: | NO | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRG7PH42UPBF | INFINEON |
获取价格 |
INSULATED GATE BIPOLAR TRANSISTOR | |
IRG7PH44K10D-EPBF | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode | |
IRG7PH44K10DPBF | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode | |
IRG7PH44K10DPBF_15 | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode | |
IRG7PH46UD-EP | INFINEON |
获取价格 |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE | |
IRG7PH46UDPBF | INFINEON |
获取价格 |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE | |
IRG7PH46U-EP | INFINEON |
获取价格 |
INSULATED GATE BIPOLAR TRANSISTOR | |
IRG7PH46UPBF | INFINEON |
获取价格 |
INSULATED GATE BIPOLAR TRANSISTOR | |
IRG7PH50K10D-EPBF | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode | |
IRG7PH50K10DPBF | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode |