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IRG7PH44K10DPBF_15

更新时间： 2024-01-09 21:33:44
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英飞凌 - INFINEON 栅
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12页 879K
描述
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode

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IRG7PH44K10DPBF_15 数据手册

 浏览型号IRG7PH44K10DPBF_15的Datasheet PDF文件第2页浏览型号IRG7PH44K10DPBF_15的Datasheet PDF文件第3页浏览型号IRG7PH44K10DPBF_15的Datasheet PDF文件第4页浏览型号IRG7PH44K10DPBF_15的Datasheet PDF文件第5页浏览型号IRG7PH44K10DPBF_15的Datasheet PDF文件第6页浏览型号IRG7PH44K10DPBF_15的Datasheet PDF文件第7页 
IRG7PH44K10DPbF  
IRG7PH44K10D-EPbF  
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode  
VCES = 1200V  
C
IC = 40A, TC =100°C  
tSC 10µs, TJ(max) = 150°C  
CE(ON) typ. = 1.9V @ IC = 25A  
G
E
V
IRG7PH44K10D‐EPbF  
TO‐247AD  
IRG7PH44K10DPbF  
n-channel  
TO‐247AC  
Applications  
• Industrial Motor Drive  
• UPS  
G
C
E
Gate  
Collector  
Emitter  
Features  
Benefits  
Low VCE(ON) and switching losses  
10µs Short Circuit SOA  
Square RBSOA  
High efficiency in a Wide Range of Applications  
Rugged Transient Performance  
Maximum Junction Temperature 150°C  
Positive VCE (ON) Temperature Coefficient  
Increased Reliability  
Excellent Current Sharing in Parallel Operation  
Base part number  
Package Type  
Standard Pack  
Form  
Orderable Part Number  
Quantity  
IRG7PH44K10DPbF  
IRG7PH44K10D-EPbF  
TO-247AC  
TO-247AD  
Tube  
Tube  
25  
25  
IRG7PH44K10DPbF  
IRG7PH44K10D-EPbF  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
VCES  
Collector-to-Emitter Voltage  
Continuous Collector Current  
Continuous Collector Current  
Pulse Collector Current, VGE=20V  
1200  
70  
40  
V
IC @ TC = 25°C  
IC @ TC = 100°C  
ICM  
A
100  
ILM  
Clamped Inductive Load Current, VGE=20V  
Diode Continuous Forward Current  
Diode Continuous Forward Current  
Continuous Gate-to-Emitter Voltage  
Maximum Power Dissipation  
100  
20  
10  
±30  
320  
120  
IF @ TC = 25°C  
IF @ TC = 100°C  
VGE  
PD @ TC = 25°C  
PD @ TC = 100°C  
TJ  
V
W
Maximum Power Dissipation  
Operating Junction and  
-40 to +150  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 sec.  
Mounting Torque, 6-32 or M3 Screw  
C
300 (0.063 in. (1.6mm) from case)  
10 lbf·in (1.1 N·m)  
Thermal Resistance  
Parameter  
Min.  
–––  
–––  
–––  
–––  
Typ.  
–––  
–––  
0.24  
40  
Max.  
0.40  
1.3  
–––  
–––  
Units  
Thermal Resistance Junction-to-Case-(each IGBT)   
Thermal Resistance Junction-to-Case-(each Diode)   
Thermal Resistance, Case-to-Sink (flat, greased surface)  
Thermal Resistance, Junction-to-Ambient (typical socket mount)  
RJC (IGBT)  
RJC (Diode)  
RCS  
°C/W  
RJA  
1
www.irf.com  
© 2014 International Rectifier  
Submit Datasheet Feedback  
May 29, 2014  
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