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IRG7PH50K10DPBF

更新时间： 2024-01-06 22:25:09
品牌 Logo 应用领域
英飞凌 - INFINEON 栅
页数 文件大小 规格书
12页 550K
描述
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode

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中文翻译

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IRG7PH50K10DPBF 数据手册

 浏览型号IRG7PH50K10DPBF的Datasheet PDF文件第2页浏览型号IRG7PH50K10DPBF的Datasheet PDF文件第3页浏览型号IRG7PH50K10DPBF的Datasheet PDF文件第4页浏览型号IRG7PH50K10DPBF的Datasheet PDF文件第5页浏览型号IRG7PH50K10DPBF的Datasheet PDF文件第6页浏览型号IRG7PH50K10DPBF的Datasheet PDF文件第7页 
IRG7PH50K10DPbF  
IRG7PH50K10D-EPbF  
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode  
C
VCES = 1200V  
G
G
IC = 50A, TC =100°C  
tSC 10µs, TJ(max) = 150°C  
G
E
E
C
V
CE(ON) typ. = 1.9V @ IC = 35A  
C
E
G
G
n-channel  
IRG7PH50K10DPbF  
IRG7PH50K10D‐EPbF  
Applications  
• Industrial Motor Drive  
• UPS  
• Solar Inverters  
• Welding  
G
C
E
Gate  
Collector  
Emitter  
Features  
Benefits  
Low VCE(ON) and switching losses  
10µs Short Circuit SOA  
Square RBSOA  
High efficiency in a Wide Range of Applications  
Rugged Transient Performance  
Maximum Junction Temperature 150°C  
Positive VCE (ON) Temperature Coefficient  
Increased Reliability  
Excellent Current Sharing in Parallel Operation  
Base part number  
Package Type  
Standard Pack  
Form  
Orderable Part Number  
Quantity  
IRG7PH50K10DPBF  
IRG7PH50K10D-EPBF  
TO-247AC  
TO-247AD  
Tube  
Tube  
25  
25  
IRG7PH50K10DPBF  
IRG7PH50K10D-EPBF  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
VCES  
Collector-to-Emitter Voltage  
Continuous Collector Current  
Continuous Collector Current  
Pulse Collector Current, VGE=20V  
1200  
90  
50  
V
IC @ TC = 25°C  
IC @ TC = 100°C  
ICM  
A
160  
ILM  
Clamped Inductive Load Current, VGE=20V  
Diode Continous Forward Current  
Diode Continous Forward Current  
Continuous Gate-to-Emitter Voltage  
Maximum Power Dissipation  
160  
20  
10  
±30  
400  
160  
IF @ TC = 25°C  
IF @ TC = 100°C  
VGE  
PD @ TC = 25°C  
PD @ TC = 100°C  
TJ  
V
W
Maximum Power Dissipation  
Operating Junction and  
-40 to +150  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 sec.  
Mounting Torque, 6-32 or M3 Screw  
C
300 (0.063 in. (1.6mm) from case)  
10 lbf·in (1.1 N·m)  
Thermal Resistance  
Parameter  
Min.  
–––  
–––  
–––  
–––  
Typ.  
–––  
–––  
0.24  
40  
Max.  
0.3  
1.4  
–––  
–––  
Units  
Thermal Resistance Junction-to-Case-(each IGBT)   
Thermal Resistance Junction-to-Case-(each Diode)   
Thermal Resistance, Case-to-Sink (flat, greased surface)  
Thermal Resistance, Junction-to-Ambient (typical socket mount)  
RJC (IGBT)  
RJC (Diode)  
RCS  
°C/W  
RJA  
1
www.irf.com  
© 2012 International Rectifier  
January 09, 2013  
1234567...12

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