Datasheet > IRG7PH37K10DPBF_15

IRG7PH37K10DPBF_15

更新时间： 2024-02-08 08:54:12

品牌	Logo	应用领域
英飞凌 - INFINEON		栅
页数	文件大小	规格书
12页	647K
描述
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode

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IRG7PH37K10DPbF

IRG7PH37K10D-EPbF

Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode

V_CES= 1200V

I_C= 25A, T_C=100°C

t_SC10µs, T_J(max)= 150°C

_CE(ON)typ. = 1.9V @ IC = 15A

IRG7PH37K10D‐EPbF

TO‐247AD

IRG7PH37K10DPbF

TO‐247AC

n-channel

Applications

• Industrial Motor Drive

• UPS

Gate

Collector

Emitter

Features

Benefits

Low V_CE(ON)and Switching Losses

10µs Short Circuit SOA

Square RBSOA

High Efficiency in a Wide Range of Applications

Rugged Transient Performance

Maximum Junction Temperature 150°C

Positive V_{CE (ON)}Temperature Coefficient

Increased Reliability

Excellent Current Sharing in Parallel Operation

Base part number

Package Type

Standard Pack

Form

Orderable Part Number

Quantity

IRG7PH37K10DPBF

TO-247AC

TO-247AD

Tube

IRG7PH37K10DPBF

IRG7PH37K10D-EPBF

Absolute Maximum Ratings

Parameter

Max.

Units

V_CES

Collector-to-Emitter Voltage

Continuous Collector Current

Pulse Collector Current, V_GE=20V

1200

I_C@ T_C= 25°C

I_C@ T_C= 100°C

I_CM

I_LM

Clamped Inductive Load Current, V_GE=20V 

Diode Continuous Forward Current

Continuous Gate-to-Emitter Voltage

Maximum Power Dissipation

±30

216

I_F@ T_C= 25°C

I_F@ T_C= 100°C

V_GE

P_D@ T_C= 25°C

P_D@ T_C= 100°C

T_J

Maximum Power Dissipation

Operating Junction and

-40 to +150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 sec.

Mounting Torque, 6-32 or M3 Screw

300 (0.063 in. (1.6mm) from case)

10 lbf·in (1.1 N·m)

Thermal Resistance

Parameter

Min.

–––

Typ.

–––

0.24

Max.

0.6

1.7

–––

Units

Thermal Resistance Junction-to-Case-(each IGBT) 

Thermal Resistance Junction-to-Case-(each Diode) 

Thermal Resistance, Case-to-Sink (flat, greased surface)

Thermal Resistance, Junction-to-Ambient (typical socket mount)

R_JC(IGBT)

R_JC(Diode)

R_CS

°C/W

R_JA

www.irf.com

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November 4, 2013

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与IRG7PH37K10DPBF_15相关器件

型号	品牌	获取价格	描述	数据表
IRG7PH42UD1-EP	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT S
IRG7PH42UD1MPBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE
IRG7PH42UD1MPBF_15	INFINEON	获取价格	1300Vpk repetitive transient capacity
IRG7PH42UD1PBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT S
IRG7PH42UD2-EPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 60A I(C), 1200V V(BR)CES, N-Channel, TO-247AD, LEAD FRE
IRG7PH42UD2PBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 60A I(C), 1200V V(BR)CES, N-Channel, TO-247AC, LEAD FRE
IRG7PH42UD-EP	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG7PH42UDPBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG7PH42U-EP	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH42UPBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR

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